IV1D12010T2

IV1D12010T2

Images are for reference only
See Product Specifications

IV1D12010T2
Mfr.:
Описание:
SIC DIODE, 1200V 10A, TO-247-2
Упаковка:
Tube
Datasheet:
IV1D12010T2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IV1D12010T2
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Inventchip
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):725c2d86ead2badb381ee9cff6039abe
Voltage - Forward (Vf) (Max) @ If:50f6eedd1db4a22411caa105d3633963
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:175227bc732c5d53d4bd3a530d3e2bd5
Capacitance @ Vr, F:f87287e0d19d94088449bdecbdb8406c
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d2aad78b602e79a43955ea20f9b47d9e
Supplier Device Package:d2aad78b602e79a43955ea20f9b47d9e
Operating Temperature - Junction:57d4d9eedc2deb0e981150db4dec7a0a
In Stock: 120
Stock:
120 Can Ship Immediately
  • Делиться:
Для использования с
ED506S_L2_00001
ED506S_L2_00001
Panjit International Inc.
SUPERFAST RECOVERY RECTIFIERS
NXPSC04650B6J
NXPSC04650B6J
WeEn Semiconductors
DIODE SCHOTTKY 650V 4A D2PAK
E1JF-F1-0000HF
E1JF-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A SMAF
MBR140SFT1G
MBR140SFT1G
onsemi
DIODE SCHOTTKY 40V 1A SOD123L
1F6
1F6
SMC Diode Solutions
DIODE GEN PURP 800V 1A R-1
US1D
US1D
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
CMSH1-20 BK PBFREE
CMSH1-20 BK PBFREE
Central Semiconductor Corp
DIODE SCHOTTKY 20V 1A SMB
UTR22/TR
UTR22/TR
Microchip Technology
UFR,FRR
JAN1N6074
JAN1N6074
Microchip Technology
DIODE GEN PURP 100V 3A AXIAL
ZHCS2000TC
ZHCS2000TC
Diodes Incorporated
DIODE SCHOTTKY 40V 2A SOT23-6
RSFBLHMHG
RSFBLHMHG
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 500MA SUBSMA
RS1ML RTG
RS1ML RTG
Taiwan Semiconductor Corporation
DIODE GEN PURP 800MA SUB SMA
Вас также может заинтересовать
IV1D12030U3
IV1D12030U3
Inventchip
SIC DIODE, 1200V 30A(15A/LEG), T
IV1D12040U2
IV1D12040U2
Inventchip
SIC DIODE, 1200V 40A, TO-247-2
IV1D06006P3
IV1D06006P3
Inventchip
SIC DIODE, 650V 6A, DPAK
IV1D06006O2
IV1D06006O2
Inventchip
SIC DIODE, 650V 6A, TO-220-2
IV1D12010O2
IV1D12010O2
Inventchip
SIC DIODE, 1200V 10A, TO-220-2
IV1D12020T2
IV1D12020T2
Inventchip
SIC DIODE, 1200V 20A, TO-247-2
IV1Q12160T4
IV1Q12160T4
Inventchip
SIC MOSFET, 1200V 160MOHM, TO-24
IV1Q12050T3
IV1Q12050T3
Inventchip
SIC MOSFET, 1200V 50MOHM, TO-247
IVCR1407SR
IVCR1407SR
Inventchip
GENERAL PURPOSE DRIVER, 24V, 4A
IVCR2405DR
IVCR2405DR
Inventchip
GENERAL PURPOSE DRIVER, 24V, 4A
IVCR1401DR
IVCR1401DR
Inventchip
SIC MOSFET AND IGBT DRIVER, 4A,
IVCR1401DPR
IVCR1401DPR
Inventchip
SIC MOSFET AND IGBT DRIVER, 4A,