IXDH30N120D1

IXDH30N120D1

Images are for reference only
See Product Specifications

IXDH30N120D1
Mfr.:
Описание:
IGBT 1200V 60A 300W TO247AD
Упаковка:
Tube
Datasheet:
IXDH30N120D1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXDH30N120D1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):4c7be7db0ed1160a2dfac6e29929b43d
Current - Collector Pulsed (Icm):51dfc3c9d3d7bb274f5e153b727e3dee
Vce(on) (Max) @ Vge, Ic:4566b11c4b5777106e8b3c1ccfafd669
Power - Max:2fc59f23e062ab8daccab6643767a198
Switching Energy:1bbf094e159e2032ee6dc46422462047
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:88cd4de9f7f6bb2e3d997030e67fcd3c
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:75c6ef622731e9933c834d93b6cf5be5
Reverse Recovery Time (trr):bac3eef55d214ff7ff2cbfdc90250cec
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:2b9645c3fe0ecc7924b8d2e3583240ee
In Stock: 56
Stock:
56 Can Ship Immediately
  • Делиться:
Для использования с
AIGB40N65H5ATMA1
AIGB40N65H5ATMA1
Infineon Technologies
DISCRETE SWITCHES
IHW30N65R5XKSA1
IHW30N65R5XKSA1
Infineon Technologies
IGBT TRENCH 650V 60A TO247-3
IRGPC40UD2
IRGPC40UD2
Infineon Technologies
IGBT W/DIODE 600V 40A TO-247AC
IXGH30N60C2D1
IXGH30N60C2D1
IXYS
IGBT 600V 70A 190W TO247
IXST30N60CD1
IXST30N60CD1
IXYS
IGBT 600V 55A 200W TO268
IXGC12N60C
IXGC12N60C
IXYS
IGBT 600V 15A 85W ISOPLUS220
SKB04N60ATMA1
SKB04N60ATMA1
Infineon Technologies
IGBT 600V 9.4A 50W TO263-3
IRG7PSH73K10PBF
IRG7PSH73K10PBF
Infineon Technologies
IGBT TRENCH 1200V 220A SUPER247
IRGI4086PBF
IRGI4086PBF
Infineon Technologies
IGBT 300V 25A 43W TO220AB
IXGM20N60A
IXGM20N60A
IXYS
POWER MOSFET TO-3
IRGC100B60UB
IRGC100B60UB
Infineon Technologies
IGBT CHIP
GT40QR21(STA1,E,D
GT40QR21(STA1,E,D
Toshiba Semiconductor and Storage
DISCRETE IGBT TRANSISTOR TO-3PN(
Вас также может заинтересовать
VBO52-12NO7
VBO52-12NO7
IXYS
BRIDGE RECT 1P 1.2KV 52A PWS-D
DSEK60-02A
DSEK60-02A
IXYS
DIODE ARRAY GP 200V 34A TO247AD
W6672TE320
W6672TE320
IXYS
DIODE GEN PURP 1.75KV 6672A -
MDMA450U1600PT-PC
MDMA450U1600PT-PC
IXYS
MDMA450U1600PTEH-PC
GWM180-004X2-SL
GWM180-004X2-SL
IXYS
MOSFET 6N-CH 40V 180A 17-SMD
IXTQ110N10P
IXTQ110N10P
IXYS
MOSFET N-CH 100V 110A TO3P
IXFR180N10
IXFR180N10
IXYS
MOSFET N-CH 100V 165A ISOPLUS247
IXTQ40N50Q
IXTQ40N50Q
IXYS
MOSFET N-CH 500V 40A TO3P
IXTQ102N15T
IXTQ102N15T
IXYS
MOSFET N-CH 150V 102A TO3P
VDI50-12P1
VDI50-12P1
IXYS
IGBT MOD 1200V 49A 208W ECO-PAC2
IXXN340N65B4
IXXN340N65B4
IXYS
IGBT MODULE DISC IGBT SOT227B
IXGH30N120BD1
IXGH30N120BD1
IXYS
IGBT 1200V 50A TO247