IXFA4N100P-TRL

IXFA4N100P-TRL

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IXFA4N100P-TRL
Mfr.:
Описание:
MOSFET N-CH 1000V 4A TO263
Упаковка:
Tape & Reel (TR)
Datasheet:
IXFA4N100P-TRL Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXFA4N100P-TRL
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:7d3de555b1c3a2ae51332998545e5d39
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:2b31ea4c3f58f185b09be1be5bde79be
Vgs(th) (Max) @ Id:8f0e398cc92277b2d908b7d74eb7e41d
Gate Charge (Qg) (Max) @ Vgs:3c309df0dab075d5fb4f85fd7f1eb952
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:81463950b440b817a4ca2aaece5720e0
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):3b4979fdef3ecbb1da8880119fdf6552
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:9a18b428f0c35522ce6e3cec2fe1fc69
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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