IXFE23N100

IXFE23N100

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See Product Specifications

IXFE23N100
Mfr.:
Описание:
MOSFET N-CH 1000V 21A SOT227B
Упаковка:
Box
Datasheet:
IXFE23N100 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXFE23N100
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Box
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:2fa340b1be8867144a8b19014f398439
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:dac00c3f5e5eec166bec415f2d7f56e0
Vgs(th) (Max) @ Id:7d11326c48835c2431425539d8508993
Gate Charge (Qg) (Max) @ Vgs:6066af7ce7fae6c50959ccdced693718
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:42bc92c58f0658abc512043052c45fdd
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):f358c5fd61cc7627984b4a13f4e81c7c
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:2f82987a26190c22229f459d19dc6592
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
In Stock: 0
Stock:
0 Can Ship Immediately
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