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See Product Specifications
| номер части: | IXFN200N10P |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | IXYS |
| Упаковка: | Box |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | c04561299890317337cf01a5b61198d6 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | ec11456f3a2097ec090b72c4247c442f |
| Vgs(th) (Max) @ Id: | 7d11326c48835c2431425539d8508993 |
| Gate Charge (Qg) (Max) @ Vgs: | 1bcc79d1f4373af455c94b16fa393054 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 0c4c89cc59da1318c6b6b556ce5d2d06 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 79eb312703c3ad8e7b0201bb9faa5814 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 678457b2fd6f368ccd41b6654ad866df |
| Supplier Device Package: | 2f82987a26190c22229f459d19dc6592 |
| Package / Case: | cafcaadef55a90fa9f519d3abd68cad9 |
