IXFN210N30P3

IXFN210N30P3

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IXFN210N30P3
Mfr.:
Описание:
MOSFET N-CH 300V 192A SOT227B
Упаковка:
Tube
Datasheet:
IXFN210N30P3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXFN210N30P3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):7990209dc00c5b5db65871c8bf669854
Current - Continuous Drain (Id) @ 25°C:70cdbb1def0159126f3259cc1f06fa78
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:e5622272f4fa909383283162039b0ecb
Vgs(th) (Max) @ Id:7d11326c48835c2431425539d8508993
Gate Charge (Qg) (Max) @ Vgs:196f02dd974713600698dd867462f25a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:dbc3ec4a64416f8048d04efc380efc85
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):836b802ad8c6ebb4e51861d3159a3edc
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:2f82987a26190c22229f459d19dc6592
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
In Stock: 0
Stock:
0 Can Ship Immediately
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