IXFN32N100Q3

IXFN32N100Q3

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IXFN32N100Q3
Mfr.:
Описание:
MOSFET N-CH 1000V 28A SOT227B
Упаковка:
Tube
Datasheet:
IXFN32N100Q3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXFN32N100Q3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:eb744f26e77c633f46572ea54111f2c4
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:8109e432f3217fdfaaacd0c3eb3ac981
Vgs(th) (Max) @ Id:24ab6d713efc511e6a4eb7efa582ac00
Gate Charge (Qg) (Max) @ Vgs:987dff12076466a867c6670a9ab1aa9b
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:e1e830f61aa78c86831fb826c83adcbc
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):5f800beaa9e929880b8e9630f67ce38f
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:2f82987a26190c22229f459d19dc6592
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
In Stock: 10
Stock:
10 Can Ship Immediately
  • Делиться:
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