IXGH38N60U1

IXGH38N60U1

Images are for reference only
See Product Specifications

IXGH38N60U1
Mfr.:
Описание:
IGBT 600V 76A 200W TO247AD
Упаковка:
Tube
Datasheet:
IXGH38N60U1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXGH38N60U1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):51dfc3c9d3d7bb274f5e153b727e3dee
Current - Collector Pulsed (Icm):336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:0ba2d8b3359a0cc8096a773751d7d741
Power - Max:7b2d4bf616509806611d6dafe030ae20
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:2b9645c3fe0ecc7924b8d2e3583240ee
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HGT1S2N120CN
HGT1S2N120CN
Fairchild Semiconductor
N-CHANNEL IGBT
RJP60V0DPM-00#T1
RJP60V0DPM-00#T1
Renesas Electronics America Inc
IGBT 600V 45A 40W TO-3PFM
AIKW30N60CTXKSA1
AIKW30N60CTXKSA1
Infineon Technologies
IC DISCRETE 600V TO247-3
IKY50N120CH3XKSA1
IKY50N120CH3XKSA1
Infineon Technologies
IGBT 1200V 100A TO247-4
IXGA48N60A3
IXGA48N60A3
IXYS
IGBT 600V 120A 300W TO263AA
FS150R07N3E4
FS150R07N3E4
Infineon Technologies
FS150R07 - IGBT MODULE
SGH40N60UFDM1TU
SGH40N60UFDM1TU
onsemi
IGBT 600V 40A 160W TO3P
IXGK60N60B2D1
IXGK60N60B2D1
IXYS
IGBT 600V 75A 500W TO264
STGDL6NC60DIT4
STGDL6NC60DIT4
STMicroelectronics
IGBT 600V 13A 50W DPAK
SGW25N120FKSA1
SGW25N120FKSA1
Infineon Technologies
IGBT 1200V 46A 313W TO247-3
NGB8207ANT4G
NGB8207ANT4G
onsemi
IGBT 365V 20A 165W D2PAK3
GT40QR21(STA1,E,D
GT40QR21(STA1,E,D
Toshiba Semiconductor and Storage
DISCRETE IGBT TRANSISTOR TO-3PN(
Вас также может заинтересовать
EVDI430CI
EVDI430CI
IXYS
BOARD EVALUATION IXDI430CI
VUO121-16NO1
VUO121-16NO1
IXYS
BRIDGE RECT 3PHASE 1.6KV 118A E2
DSEE55-24N1F
DSEE55-24N1F
IXYS
DIODE ARRAY GP 1200V 60A I4PAC
DSI30-08AS-TRL
DSI30-08AS-TRL
IXYS
DIODE GEN PURP 800V 30A TO263
DSA1-12D
DSA1-12D
IXYS
DIODE AVALANCHE 1.2KV 2.3A
VCK105-12IO7
VCK105-12IO7
IXYS
MOD THYRISTOR 1200V 105A ECOPAC2
CLA16E800PN
CLA16E800PN
IXYS
SCR 800V 16A TO220ABFP
IXFR36N50P
IXFR36N50P
IXYS
MOSFET N-CH 500V 19A ISOPLUS247
IXFX210N17T
IXFX210N17T
IXYS
MOSFET N-CH 170V 210A PLUS247-3
IXFC24N50Q
IXFC24N50Q
IXYS
MOSFET N-CH 500V 21A ISOPLUS220
MWI50-06A7
MWI50-06A7
IXYS
IGBT MODULE 600V 72A 225W E2
IXA33IF1200HB
IXA33IF1200HB
IXYS
IGBT 1200V 58A 250W TO247