IXGK120N60B

IXGK120N60B

Images are for reference only
See Product Specifications

IXGK120N60B
Mfr.:
Описание:
IGBT 600V 200A 660W TO264AA
Упаковка:
Tube
Datasheet:
IXGK120N60B Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXGK120N60B
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:35357b9c8fe4d3273d0237ecc8ff2e75
Voltage - Collector Emitter Breakdown (Max):9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):63d19bd379a172e83028b5a9b57fac7b
Current - Collector Pulsed (Icm):d95e790c018e7fd9498584e4e223d90c
Vce(on) (Max) @ Vge, Ic:62039dec2b88db699eb926fabca9395b
Power - Max:049f706d20ce2c6294d73239959a2fd4
Switching Energy:a2b1d56e3fe992eb021f18d8685e3367
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:83ae45dabc51bf174a506d7c40a132e0
Td (on/off) @ 25°C:6a80ad20e05716b18ce501f2ab596497
Test Condition:97b1c06ddb3994367f02ca571c2e97f8
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:0609d5c3ef2c861aa3d738e8f0051688
Supplier Device Package:a665ab11b0965307ee0674d2fb321cb0
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
STGF10M65DF2
STGF10M65DF2
STMicroelectronics
IGBT TRENCH 650V 20A TO220FP
HGTP20N35G3VL
HGTP20N35G3VL
Fairchild Semiconductor
IGBT, 20A, 320V, N-CHANNEL
FGL60N100BNTD
FGL60N100BNTD
onsemi
1000V, 60A, NPT TRENCH IGBT
IXYX300N65A3
IXYX300N65A3
IXYS
DISC IGBT XPT-GENX3 TO-247AD
HGTP12N60A4D
HGTP12N60A4D
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
IXGA20N120B
IXGA20N120B
IXYS
IGBT 1200V 40A 150W TO263
IXGT60N60C3D1
IXGT60N60C3D1
IXYS
IGBT 600V 75A 380W TO268
IKD04N60RF
IKD04N60RF
Infineon Technologies
IGBT 600V 8A 75W TO252-3
IRGP4262DPBF
IRGP4262DPBF
Infineon Technologies
IGBT 650V 60A 250W TO247AC
IRGP4620DPBF
IRGP4620DPBF
Infineon Technologies
IGBT 600V 32A 140W TO247AC
RJH65D27BDPQ-A0#T0
RJH65D27BDPQ-A0#T0
Renesas Electronics America Inc
IGBT 650V
SIGC81T60NCX7SA1
SIGC81T60NCX7SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
Вас также может заинтересовать
VUO82-14NO7
VUO82-14NO7
IXYS
BRIDGE RECT 3P 1.4KV 88A PWS-D
DSEI2X161-12P
DSEI2X161-12P
IXYS
DIODE MODULE 1.2KV 128A ECO-PAC2
MDA72-08N1B
MDA72-08N1B
IXYS
DIODE MODULE 800V 113A TO240AA
DPG10I200PA
DPG10I200PA
IXYS
DIODE GEN PURP 200V 10A TO220AC
IXFH14N85X
IXFH14N85X
IXYS
MOSFET N-CH 850V 14A TO247-3
IXTA120N075T2
IXTA120N075T2
IXYS
MOSFET N-CH 75V 120A TO263
IXFT24N90P-TRL
IXFT24N90P-TRL
IXYS
MOSFET N-CH 900V 24A TO268
IXFN27N80
IXFN27N80
IXYS
MOSFET N-CH 800V 27A SOT-227B
IRFP470
IRFP470
IXYS
MOSFET N-CH 500V 24A TO247AD
IXGN320N60A3
IXGN320N60A3
IXYS
IGBT MOD 600V 320A 735W SOT227B
IXGK400N30A3
IXGK400N30A3
IXYS
IGBT 300V 400A 1000W TO264AA
IXBX75N170A
IXBX75N170A
IXYS
IGBT 1700V 110A 1040W PLUS247