IXGK35N120CD1

IXGK35N120CD1

Images are for reference only
See Product Specifications

IXGK35N120CD1
Mfr.:
Описание:
IGBT 1200V 70A 350W PLUS247
Упаковка:
Tube
Datasheet:
IXGK35N120CD1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXGK35N120CD1
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):f761546238fefc64c5e3fd5b55f35534
Current - Collector Pulsed (Icm):62926cc41a8ded652029c4939bac73f6
Vce(on) (Max) @ Vge, Ic:de648b7a8447a84d68864480a5379114
Power - Max:4f1fd714c189e6abfaf50e16d48c8c09
Switching Energy:7de168aa9047c24fb552a74bfde9662a
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:338b10521be84d5266a0c3913340ee03
Td (on/off) @ 25°C:af3d8beb7b8f8cfc4bef0c7c234b9045
Test Condition:6918d3c812a97e714f407aa2ed583c0b
Reverse Recovery Time (trr):fd305565b54833e81cf76bf5e813d80b
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:0609d5c3ef2c861aa3d738e8f0051688
Supplier Device Package:a665ab11b0965307ee0674d2fb321cb0
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HGTD3N60B3S9A
HGTD3N60B3S9A
Harris Corporation
7A, 600V, UFS N-CHANNEL IGBT
HGT1S12N60C3S9AR4501
HGT1S12N60C3S9AR4501
Harris Corporation
27A, 600V, UFS N-CHANNEL IGBT
HGTH20N50C1
HGTH20N50C1
Harris Corporation
20A, 500V, N-CHANNEL IGBT
FGA25S125P-SN00337
FGA25S125P-SN00337
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
IXGH48N60B3D1
IXGH48N60B3D1
IXYS
IGBT 600V 300W TO247
IXXR110N65B4H1
IXXR110N65B4H1
IXYS
IGBT 650V 150A 455W ISOPLUS247
IXG70IF1200NA
IXG70IF1200NA
IXYS
IGBT MODULE - OTHERS SMPD-B
IXBF15N300C
IXBF15N300C
IXYS
IGBT 3000V 37A 300W ISOPLUSI4
FGH60N60SFDTU-F085
FGH60N60SFDTU-F085
onsemi
IGBT FIELD STOP 600V 120A TO247
SIGC04T60EX1SA2
SIGC04T60EX1SA2
Infineon Technologies
IGBT CHIP
SIGC18T60NCX7SA1
SIGC18T60NCX7SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
RGW00TS65EHRC11
RGW00TS65EHRC11
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
Вас также может заинтересовать
IXFH26N50P3
IXFH26N50P3
IXYS
MOSFET N-CH 500V 26A TO247AD
IXTY02N50D
IXTY02N50D
IXYS
MOSFET N-CH 500V 200MA TO252
IXTA80N10T-TRL
IXTA80N10T-TRL
IXYS
MOSFET N-CH 100V 80A TO263
IXTR32P60P
IXTR32P60P
IXYS
MOSFET P-CH 600V 18A ISOPLUS247
IXTE250N10
IXTE250N10
IXYS
MOSFET N-CH 100V 250A SOT227B
IXGH48N60A3D1
IXGH48N60A3D1
IXYS
IGBT 600V 300W TO247AD
IXG70IF1200NA
IXG70IF1200NA
IXYS
IGBT MODULE - OTHERS SMPD-B
IXGH42N30C3
IXGH42N30C3
IXYS
IGBT 300V 223W TO247
IXGR50N160H1
IXGR50N160H1
IXYS
IGBT 1600V 75A 240W ISOPLUS247
IXGR72N60A3H1
IXGR72N60A3H1
IXYS
IGBT 600V 75A 200W ISOPLUS247
IXGX100N160A
IXGX100N160A
IXYS
IGBT TO247
IXC611S1
IXC611S1
IXYS
IC GATE DRVR HALF BRIDGE 8SOIC