IXGT32N170

IXGT32N170

Images are for reference only
See Product Specifications

IXGT32N170
Mfr.:
Описание:
IGBT 1700V 75A 350W TO268
Упаковка:
Tube
Datasheet:
IXGT32N170 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXGT32N170
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Voltage - Collector Emitter Breakdown (Max):eefb5d410547fcbb0f7667be005adcb4
Current - Collector (Ic) (Max):ca5fe58c0a82374a403e4a77dff17d60
Current - Collector Pulsed (Icm):63d19bd379a172e83028b5a9b57fac7b
Vce(on) (Max) @ Vge, Ic:91b110bc919f6ecbc493ff1ee44cd650
Power - Max:4f1fd714c189e6abfaf50e16d48c8c09
Switching Energy:9fdb35abd8cfae24e7c463c10b933eca
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:bf1e14125ef376e22f67c6958e4840fa
Td (on/off) @ 25°C:398cfc69117ae9662e2e2ff2eb6f23a6
Test Condition:8f6318b0154123d074c0a5654dcd47f5
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:c03e2faa3efcea6b579a80e8a51287f6
Supplier Device Package:ccbbb707191fa0eaf730154dd53fc9b9
In Stock: 14
Stock:
14 Can Ship Immediately
  • Делиться:
Для использования с
FD300R07PE4_B6
FD300R07PE4_B6
Infineon Technologies
FD300R07 - IGBT MODULE
IKY75N120CH3XKSA1
IKY75N120CH3XKSA1
Infineon Technologies
IGBT 1200V 150A TO247-4
FGB3245G2
FGB3245G2
Fairchild Semiconductor
ECOSPARK2 450V IGNITION IGBT
HGTG20N60C3D
HGTG20N60C3D
onsemi
IGBT 600V 45A 164W TO247
IRG4BC40SPBF
IRG4BC40SPBF
Infineon Technologies
IGBT 600V 60A 160W TO220AB
IXSH24N60BD1
IXSH24N60BD1
IXYS
IGBT 600V 48A 150W TO247
SKW20N60HSFKSA1
SKW20N60HSFKSA1
Infineon Technologies
IGBT 600V 36A 178W TO247-3
RJH60D6DPM-00#T1
RJH60D6DPM-00#T1
Renesas Electronics America Inc
IGBT 600V 80A 50W TO-3PFM
IRG8P08N120KDPBF
IRG8P08N120KDPBF
Infineon Technologies
IGBT 1200V 15A 89W TO-247AC
NGTB25N120SWG
NGTB25N120SWG
onsemi
IGBT 25A 1200V TO-247
SIGC25T60NCX1SA7
SIGC25T60NCX1SA7
Infineon Technologies
IGBT 3 CHIP 600V WAFER
RGWX5TS65GC11
RGWX5TS65GC11
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
Вас также может заинтересовать
MCC500-20IO1
MCC500-20IO1
IXYS
SCR THY PHASE LEG 2000V WC-500
N2600MC180
N2600MC180
IXYS
SCR 1.8KV 5200A W70
IXFB82N60P
IXFB82N60P
IXYS
MOSFET N-CH 600V 82A PLUS264
IXFX230N20T
IXFX230N20T
IXYS
MOSFET N-CH 200V 230A PLUS247-3
IXFK64N50P
IXFK64N50P
IXYS
MOSFET N-CH 500V 64A TO264AA
IXFH20N60Q
IXFH20N60Q
IXYS
MOSFET N-CH 600V 20A TO247AD
IXYK140N90C3
IXYK140N90C3
IXYS
IGBT 900V 310A 1630W TO264
IXGF20N300
IXGF20N300
IXYS
IGBT 3000V 22A 100W I4-PAK
IXXR100N60B3H1
IXXR100N60B3H1
IXYS
IGBT 600V 145A 400W ISOPLUS247
IXGH40N60C
IXGH40N60C
IXYS
IGBT 600V 75A 250W TO247AD
IX6R11P7
IX6R11P7
IXYS
IC GATE DRVR HALF-BRIDGE 14DIP
IXDN504D1
IXDN504D1
IXYS
IC GATE DRVR LOW-SIDE 6DFN