IXGT32N170

IXGT32N170

Images are for reference only
See Product Specifications

IXGT32N170
Mfr.:
Описание:
IGBT 1700V 75A 350W TO268
Упаковка:
Tube
Datasheet:
IXGT32N170 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXGT32N170
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Voltage - Collector Emitter Breakdown (Max):eefb5d410547fcbb0f7667be005adcb4
Current - Collector (Ic) (Max):ca5fe58c0a82374a403e4a77dff17d60
Current - Collector Pulsed (Icm):63d19bd379a172e83028b5a9b57fac7b
Vce(on) (Max) @ Vge, Ic:91b110bc919f6ecbc493ff1ee44cd650
Power - Max:4f1fd714c189e6abfaf50e16d48c8c09
Switching Energy:9fdb35abd8cfae24e7c463c10b933eca
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:bf1e14125ef376e22f67c6958e4840fa
Td (on/off) @ 25°C:398cfc69117ae9662e2e2ff2eb6f23a6
Test Condition:8f6318b0154123d074c0a5654dcd47f5
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:c03e2faa3efcea6b579a80e8a51287f6
Supplier Device Package:ccbbb707191fa0eaf730154dd53fc9b9
In Stock: 14
Stock:
14 Can Ship Immediately
  • Делиться:
Для использования с
MGB20N36CL
MGB20N36CL
onsemi
IGBT D2PAK 360V CL
ISL9V3040S3ST-F085C
ISL9V3040S3ST-F085C
onsemi
ECOSPARK1 IGN-IGBT TO263
HGTG12N60C3D
HGTG12N60C3D
Harris Corporation
UFS SERIES N-CH IGBT
IXXH75N60C3D1
IXXH75N60C3D1
IXYS
IGBT 600V 150A 750W TO247
IKW15T120
IKW15T120
Infineon Technologies
IKW15T120 - DISCRETE IGBT WITH A
STGB14NC60KT4
STGB14NC60KT4
STMicroelectronics
IGBT 600V 25A 80W D2PAK
IXGH41N60
IXGH41N60
IXYS
IGBT 600V 76A 200W TO247AD
IRG6IC30UPBF
IRG6IC30UPBF
Infineon Technologies
IGBT 600V 25A 37W TO220ABFP
IRGP4640DPBF
IRGP4640DPBF
Infineon Technologies
IGBT 600V 65A TO247AD
IRGS4630DPBF
IRGS4630DPBF
Infineon Technologies
IGBT 600V 47A 206W D2PAK
NGTD20T120F2SWK
NGTD20T120F2SWK
onsemi
IGBT TRENCH FIELD STOP 1200V DIE
RGT30NS65DGTL
RGT30NS65DGTL
Rohm Semiconductor
IGBT 650V 30A 133W TO-263S
Вас также может заинтересовать
IXBOD1-23R
IXBOD1-23R
IXYS
IC DIODE MODULE BOD 0.9A 2300V
MCD72-14IO8B
MCD72-14IO8B
IXYS
MOD THYRISTOR/DIO 1400V TO-240AA
MCD162-16IO1B
MCD162-16IO1B
IXYS
BIPOLAR MODULE-THYRISTOR/DIODE Y
IXTT11P50
IXTT11P50
IXYS
MOSFET P-CH 500V 11A TO268
IXFT140N10P
IXFT140N10P
IXYS
MOSFET N-CH 100V 140A TO268
IXFN100N65X2
IXFN100N65X2
IXYS
MOSFET N-CH 650V 78A SOT227B
IXFN21N100Q
IXFN21N100Q
IXYS
MOSFET N-CH 1000V 21A SOT-227B
IXTA160N085T
IXTA160N085T
IXYS
MOSFET N-CH 85V 160A TO263
IXTA72N20T
IXTA72N20T
IXYS
MOSFET N-CH 200V 72A TO263
IXTK110N30
IXTK110N30
IXYS
MOSFET N-CH 300V 110A TO264
IXYT85N120A4HV
IXYT85N120A4HV
IXYS
IGBT GENX4 1200V 85A TO268HV
IXXH75N60B3
IXXH75N60B3
IXYS
DISC IGBT XPT-GENX3 TO-247AD