IXTA1N100P

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See Product Specifications

Mfr. #:

IXTA1N100P

Mfr.:

IXYS

Описание:

MOSFET N-CH 1000V 1A TO263

Упаковка:

Tube

Datasheet:

IXTA1N100P Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IXTA1N100P
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	IXYS
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:	5ec53c66a19049c976ca5e6f7214e587
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	64b8a9450dbb14e93873eaa2564bce3c
Vgs(th) (Max) @ Id:	4396c6f856889fe6741061428950f03f
Gate Charge (Qg) (Max) @ Vgs:	a3f2a473a46fabb2a0641561c4d0a10b
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	39b58bc816c9edb9c84c5c4c749fba92
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	834bbc8016135d4c73a1bf9fa6b30b1b
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	8eb0ade4b7e5562c198e107b6e89f3bd
Package / Case:	99446f4470b43888d0c78d7d2cdfc956

In Stock: 65

Stock:

65 Can Ship Immediately