IXTA1N200P3HV

IXTA1N200P3HV

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IXTA1N200P3HV
Mfr.:
Описание:
MOSFET N-CH 2000V 1A TO263
Упаковка:
Tube
Datasheet:
IXTA1N200P3HV Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTA1N200P3HV
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5c99479e8b7148709c143fce73f97199
Current - Continuous Drain (Id) @ 25°C:5ec53c66a19049c976ca5e6f7214e587
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f5fa38d4323e9bad0bd7684adc6cb889
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:0180145aa0e44148f00195660b222e4d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:370ca5bc99a424ff663b20e56660e9b5
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8eb0ade4b7e5562c198e107b6e89f3bd
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 1
Stock:
1 Can Ship Immediately
  • Делиться:
Для использования с
STD26NF10
STD26NF10
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TRENCH >=100V PG-TDSON-8
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