IXTA1R4N100P

IXTA1R4N100P

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IXTA1R4N100P
Mfr.:
Описание:
MOSFET N-CH 1000V 1.4A TO263
Упаковка:
Tube
Datasheet:
IXTA1R4N100P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTA1R4N100P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:826169452157d758425483eeaf04be20
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:d3686b080376da0a00c649aa58d9b5d4
Vgs(th) (Max) @ Id:4396c6f856889fe6741061428950f03f
Gate Charge (Qg) (Max) @ Vgs:bb01ba53641f588c825c18c0949d9539
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:1ffc5b9d0fddb0b331838ede027100a4
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c536ccddca9c99653f1af1372ed95f08
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8eb0ade4b7e5562c198e107b6e89f3bd
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 110
Stock:
110 Can Ship Immediately
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