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See Product Specifications
| номер части: | IXTA1R6N100D2 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | IXYS |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | b912e8e9b12311ef3cd41c0d58a8ccc8 |
| Current - Continuous Drain (Id) @ 25°C: | 5e2db5c0a77aea0ddc30a462160926e3 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 57d51f6455ff3c6db46079f3d509c1f7 |
| Vgs(th) (Max) @ Id: | 336d5ebc5436534e61d16e63ddfca327 |
| Gate Charge (Qg) (Max) @ Vgs: | bce8566d45a3d29b6b5a96e927752922 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | a8104e6b1bd161ee1331c1c0fb0b23e0 |
| FET Feature: | 5a3cf4f27c5777db8b571ca4dff46f99 |
| Power Dissipation (Max): | b1b9c7ff3bcb5642e62edfb8c3bca1bc |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 8eb0ade4b7e5562c198e107b6e89f3bd |
| Package / Case: | 99446f4470b43888d0c78d7d2cdfc956 |
