IXTA2R4N120P

IXTA2R4N120P

Images are for reference only
See Product Specifications

IXTA2R4N120P
Mfr.:
Описание:
MOSFET N-CH 1200V 2.4A TO263
Упаковка:
Tube
Datasheet:
IXTA2R4N120P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTA2R4N120P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:f5fe67847e317fe5f6c60c45d146238a
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:3b826dbb92f65d8f8887c44903dcbf2e
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:6c34ab415af6e1fcb39f91c86ab02ea4
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c8999b970f1a48a78bb7115a575a292c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8eb0ade4b7e5562c198e107b6e89f3bd
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
TK2R4E08QM,S1X
TK2R4E08QM,S1X
Toshiba Semiconductor and Storage
UMOS10 TO-220AB 80V 2.4MOHM
STP150NF04
STP150NF04
STMicroelectronics
MOSFET N-CH 40V 80A TO220AB
PH6030DLV115
PH6030DLV115
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
ZXM61N02FTC
ZXM61N02FTC
Diodes Incorporated
MOSFET N-CH 20V 1.7A SOT23-3
TK28N65W,S1F
TK28N65W,S1F
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 27.6A TO247
YJD45G10A-F1-0000HF
YJD45G10A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 100V 45A TO-252
IRL1404SPBF
IRL1404SPBF
Infineon Technologies
MOSFET N-CH 40V 160A D2PAK
IRF7524D1PBF
IRF7524D1PBF
Infineon Technologies
MOSFET P-CH 20V 1.7A MICRO8
FQD8P10TM_F080
FQD8P10TM_F080
onsemi
MOSFET P-CH 100V 6.6A DPAK
IPB80N06S2H5ATMA1
IPB80N06S2H5ATMA1
Infineon Technologies
MOSFET N-CH 55V 80A TO263-3
SIA462DJ-T4-GE3
SIA462DJ-T4-GE3
Vishay Siliconix
MOSFET N-CH 30V 12A/12A PPAK
RJ1L12CGNTLL
RJ1L12CGNTLL
Rohm Semiconductor
NCH 60V 120A POWER MOSFET: RJ1L1
Вас также может заинтересовать
VUO35-16NO7
VUO35-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 38A PWS-A
MDMA110P1200TG
MDMA110P1200TG
IXYS
DIODE MODULE 1.2KV 110A TO240AA
MDD175-28N1
MDD175-28N1
IXYS
DIODE MODULE 2.8KV 240A Y1-CU
DSA17-16A
DSA17-16A
IXYS
DIODE AVALANCHE 1.6KV 25A DO203
IXTU01N100
IXTU01N100
IXYS
MOSFET N-CH 1000V 100MA TO251
IXFH40N50Q2
IXFH40N50Q2
IXYS
MOSFET N-CH 500V 40A TO247AD
IXFQ24N50Q
IXFQ24N50Q
IXYS
MOSFET N-CH 500V 24A TO3P
IXTP160N085T
IXTP160N085T
IXYS
MOSFET N-CH 85V 160A TO220AB
IXFH70N15
IXFH70N15
IXYS
MOSFET N-CH 150V 70A TO247AD
IXTH6N80A
IXTH6N80A
IXYS
MOSFET N-CH 800V 6A TO247
IXGE200N60B
IXGE200N60B
IXYS
IGBT MOD 600V 160A ISOPLUS227
IXGH30N60C3C1
IXGH30N60C3C1
IXYS
IGBT 600V 60A 220W TO247