IXTA2R4N120P

IXTA2R4N120P

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IXTA2R4N120P
Mfr.:
Описание:
MOSFET N-CH 1200V 2.4A TO263
Упаковка:
Tube
Datasheet:
IXTA2R4N120P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTA2R4N120P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:f5fe67847e317fe5f6c60c45d146238a
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:3b826dbb92f65d8f8887c44903dcbf2e
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:6c34ab415af6e1fcb39f91c86ab02ea4
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:c8999b970f1a48a78bb7115a575a292c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8eb0ade4b7e5562c198e107b6e89f3bd
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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