IXTE250N10

IXTE250N10

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IXTE250N10
Mfr.:
Описание:
MOSFET N-CH 100V 250A SOT227B
Упаковка:
Tube
Datasheet:
IXTE250N10 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTE250N10
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:38251c72aef16af40a8b347abda24054
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):a1510d81930d8f8e41d73e80d15f1747
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:2f82987a26190c22229f459d19dc6592
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
In Stock: 0
Stock:
0 Can Ship Immediately
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