IXTH1N200P3

IXTH1N200P3

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IXTH1N200P3
Mfr.:
Описание:
MOSFET N-CH 2000V 1A TO247
Упаковка:
Tube
Datasheet:
IXTH1N200P3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTH1N200P3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5c99479e8b7148709c143fce73f97199
Current - Continuous Drain (Id) @ 25°C:5ec53c66a19049c976ca5e6f7214e587
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:f5fa38d4323e9bad0bd7684adc6cb889
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:0180145aa0e44148f00195660b222e4d
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:370ca5bc99a424ff663b20e56660e9b5
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:edd9a2dcab08986134ec7cc39fbfa1c3
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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