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See Product Specifications
| номер части: | IXTH2R4N120P |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | IXYS |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | edca1d2343e4e5615ce51a879f622a76 |
| Current - Continuous Drain (Id) @ 25°C: | f5fe67847e317fe5f6c60c45d146238a |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 3b826dbb92f65d8f8887c44903dcbf2e |
| Vgs(th) (Max) @ Id: | 63ae2c6ac5292648558e227400623846 |
| Gate Charge (Qg) (Max) @ Vgs: | 6c34ab415af6e1fcb39f91c86ab02ea4 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | c8999b970f1a48a78bb7115a575a292c |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 9ab21596dbbd1fdf7a3f4aba0a4832ee |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Supplier Device Package: | edd9a2dcab08986134ec7cc39fbfa1c3 |
| Package / Case: | 748a8539a6c3c7dbdb455218c72fac40 |
