IXTH3N100P

IXTH3N100P

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IXTH3N100P
Mfr.:
Описание:
MOSFET N-CH 1000V 3A TO247
Упаковка:
Tube
Datasheet:
IXTH3N100P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTH3N100P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:f5471b3e019830b8910e32dfcbdd5756
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:20babf05fcc2b39c712c26724e2d1a43
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:1c2591769ca12fd398ae23dd26f13ec6
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:017a578f4ed82f5b0816090c87c17585
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:edd9a2dcab08986134ec7cc39fbfa1c3
Package / Case:748a8539a6c3c7dbdb455218c72fac40
In Stock: 0
Stock:
0 Can Ship Immediately
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