IXTN210P10T

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See Product Specifications

Mfr. #:

IXTN210P10T

Mfr.:

IXYS

Описание:

MOSFET P-CH 100V 210A SOT227B

Упаковка:

Tube

Datasheet:

IXTN210P10T Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IXTN210P10T
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	IXYS
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	0bc00c5fd7ebb3ec72aec1e5046dc4ce
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	22154f6d1cd1393aadb946c3d3c7ab58
Vgs(th) (Max) @ Id:	63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:	d36cd69e88255adcef814fd894d57587
Vgs (Max):	9884d8b7fc60ad43c98d6d70ea13a6eb
Input Capacitance (Ciss) (Max) @ Vds:	89c3c05a8af3077ab6a55183784b67e9
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	7d23dd77edca333cfff2c32b2bf962d2
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:	2f82987a26190c22229f459d19dc6592
Package / Case:	cafcaadef55a90fa9f519d3abd68cad9

In Stock: 0

Stock:

0 Can Ship Immediately