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See Product Specifications
| номер части: | IXTN660N04T4 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | IXYS |
| Упаковка: | Tube |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 628cbc3e45d5bacb32414a526acf56ef |
| Current - Continuous Drain (Id) @ 25°C: | 2eba03b6ccf89b964912034907a36ff9 |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 8108225498a5f2c61a7e4eb1fb662a07 |
| Vgs(th) (Max) @ Id: | 9238c44d66e9d51854326c16b3397896 |
| Gate Charge (Qg) (Max) @ Vgs: | f7abd3349862c5fe07254342c28861d1 |
| Vgs (Max): | 9884d8b7fc60ad43c98d6d70ea13a6eb |
| Input Capacitance (Ciss) (Max) @ Vds: | b9ce3376a4de1a98253ceaa10fd33caa |
| FET Feature: | a1dd9c41566e55c2080dad3d96976c14 |
| Power Dissipation (Max): | 5500721b62d26d11f6508e2cf47bf179 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 678457b2fd6f368ccd41b6654ad866df |
| Supplier Device Package: | 2f82987a26190c22229f459d19dc6592 |
| Package / Case: | cafcaadef55a90fa9f519d3abd68cad9 |
