IXTN660N04T4

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See Product Specifications

Mfr. #:

IXTN660N04T4

Mfr.:

IXYS

Описание:

MOSFET N-CH 40V 660A SOT227B

Упаковка:

Tube

Datasheet:

IXTN660N04T4 Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IXTN660N04T4
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	IXYS
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	2eba03b6ccf89b964912034907a36ff9
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	8108225498a5f2c61a7e4eb1fb662a07
Vgs(th) (Max) @ Id:	9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:	f7abd3349862c5fe07254342c28861d1
Vgs (Max):	9884d8b7fc60ad43c98d6d70ea13a6eb
Input Capacitance (Ciss) (Max) @ Vds:	b9ce3376a4de1a98253ceaa10fd33caa
FET Feature:	a1dd9c41566e55c2080dad3d96976c14
Power Dissipation (Max):	5500721b62d26d11f6508e2cf47bf179
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	678457b2fd6f368ccd41b6654ad866df
Supplier Device Package:	2f82987a26190c22229f459d19dc6592
Package / Case:	cafcaadef55a90fa9f519d3abd68cad9

In Stock: 0

Stock:

0 Can Ship Immediately