IXTP2N100P

IXTP2N100P

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See Product Specifications

IXTP2N100P
Mfr.:
Описание:
MOSFET N-CH 1000V 2A TO220AB
Упаковка:
Tube
Datasheet:
IXTP2N100P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTP2N100P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:a94e61109c54813522be818a0ece14f0
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:3b826dbb92f65d8f8887c44903dcbf2e
Vgs(th) (Max) @ Id:2b7fe58fde8a6245ca2cdb48cebfd2f2
Gate Charge (Qg) (Max) @ Vgs:6ad285d978c620d8a08fef6cd00e0c9a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:3c5fef5c42e7bc7660c33253a698e9da
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):5a26ea5f8040c9803e9e8d564f2a21b9
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:46bb638de2ea693de650d7f1c3115468
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 130
Stock:
130 Can Ship Immediately
  • Делиться:
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