IXTQ34N65X2M

IXTQ34N65X2M

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IXTQ34N65X2M
Mfr.:
Описание:
DISCRETE MOSFET 34A 650V X2 TO3P
Упаковка:
Tube
Datasheet:
IXTQ34N65X2M Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTQ34N65X2M
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:59e6fc9ea45d689c2809c4d653f1b606
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:30ae0627c91d2a283770142d3ddaf23c
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:64ee8dd5f85654f637492b50eb905c25
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:082340228a1e79450ab538340bcfd33a
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):80c5397018316138cb9de5c348854653
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:dc62bb2234bdbf5b418010bea6cac21b
Package / Case:a37ad9863329afbf5b7bab5645143153
In Stock: 0
Stock:
0 Can Ship Immediately
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