IXTQ34N65X2M

Images are for reference only
See Product Specifications

Mfr. #:

IXTQ34N65X2M

Mfr.:

IXYS

Описание:

DISCRETE MOSFET 34A 650V X2 TO3P

Упаковка:

Tube

Datasheet:

IXTQ34N65X2M Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	IXTQ34N65X2M
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	IXYS
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	347f255197950e6b02089b73b6a8acdd
Current - Continuous Drain (Id) @ 25°C:	59e6fc9ea45d689c2809c4d653f1b606
Drive Voltage (Max Rds On, Min Rds On):	76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:	30ae0627c91d2a283770142d3ddaf23c
Vgs(th) (Max) @ Id:	aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:	64ee8dd5f85654f637492b50eb905c25
Vgs (Max):	972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:	082340228a1e79450ab538340bcfd33a
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	80c5397018316138cb9de5c348854653
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	dc62bb2234bdbf5b418010bea6cac21b
Package / Case:	a37ad9863329afbf5b7bab5645143153

In Stock: 0

Stock:

0 Can Ship Immediately