IXTT6N120

IXTT6N120

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IXTT6N120
Mfr.:
Описание:
MOSFET N-CH 1200V 6A TO268
Упаковка:
Box
Datasheet:
IXTT6N120 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTT6N120
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Box
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:ff2da2e5c593aab4d0b1e137db724b7a
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:8a8ab65b1f29591974f3f0284f70c466
Vgs(th) (Max) @ Id:aa9c33afb123e4299b76ff79e98e6369
Gate Charge (Qg) (Max) @ Vgs:ec7ed06369aef779c1b881719a9ae5ce
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:9b021ea7de444bc09ddd0c650c4c14a6
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ac1760e6638f8a136f249122761ef823
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:ccbbb707191fa0eaf730154dd53fc9b9
Package / Case:c03e2faa3efcea6b579a80e8a51287f6
In Stock: 0
Stock:
0 Can Ship Immediately
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