IXYH16N250C

IXYH16N250C

Images are for reference only
See Product Specifications

IXYH16N250C
Mfr.:
Описание:
IGBT 2500V 35A TO247AD
Упаковка:
Tube
Datasheet:
IXYH16N250C Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXYH16N250C
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):8e213c781256be64f89beee1029c11cc
Current - Collector (Ic) (Max):33620148295903fa01c1f5f1771e354b
Current - Collector Pulsed (Icm):ad54f00f001c1c94f2947fc1a698e711
Vce(on) (Max) @ Vge, Ic:00eef154ab1dd2838d04ace4f179be3c
Power - Max:b2fb9724b34efd3b0664518acdc93628
Switching Energy:017bd4b2929f93b6e636d492514d78b0
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:630ec69f8f3d16cab740e3a49de07fb8
Td (on/off) @ 25°C:93f15e8494a5eff513ec4f78cac97e34
Test Condition:dd01f61bb0c8bb3eb548fcbe00d0e173
Reverse Recovery Time (trr):db0df77f24c999c2c5635deceebd38c0
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:2b9645c3fe0ecc7924b8d2e3583240ee
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RJP63G4DPE-00#J3
RJP63G4DPE-00#J3
Renesas Electronics America Inc
N CH IGBT
STGW40H65DFB-4
STGW40H65DFB-4
STMicroelectronics
IGBT
HGT1S10N120BNS
HGT1S10N120BNS
Fairchild Semiconductor
IGBT, 35A, 1200V, N-CHANNEL, TO-
NGTD14T65F2SWK
NGTD14T65F2SWK
onsemi
IGBT TRENCH FIELD STOP 650V DIE
IXBA16N170AHV-TRL
IXBA16N170AHV-TRL
IXYS
DISC IGBT BIMOSFET-HIGH VOLT TO-
IXGX50N60C2D1
IXGX50N60C2D1
IXYS
IGBT 600V 75A 480W TO247
IXST30N60CD1
IXST30N60CD1
IXYS
IGBT 600V 55A 200W TO268
IRGP4063D1-EPBF
IRGP4063D1-EPBF
Infineon Technologies
IGBT 600V 100A 330W TO-247AD
IRG7PH35UD-EP
IRG7PH35UD-EP
Infineon Technologies
IGBT 1200V 50A COPAK247
STGW15S120DF3
STGW15S120DF3
STMicroelectronics
IGBT 1200V 15A TO247
SIGC28T60EX1SA3
SIGC28T60EX1SA3
Infineon Technologies
IGBT 3 CHIP 600V 50A WAFER
RGW80TS65HRC11
RGW80TS65HRC11
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
Вас также может заинтересовать
VBO22-08NO8
VBO22-08NO8
IXYS
BRIDGE RECT 1PHASE 800V 21A FO-B
VW2X60-16IO1
VW2X60-16IO1
IXYS
MODULE AC CTLR 2X60A 1600V V1-A
MCD132-12IO1
MCD132-12IO1
IXYS
MOD THYRISTOR/DIODE 1200V Y4-M6
MCNA120UI2200PED
MCNA120UI2200PED
IXYS
BIPOLAR MODULE - THYRISTOR E2-P
IXTP08N120P
IXTP08N120P
IXYS
MOSFET N-CH 1200V 800MA TO220AB
IXFK120N30P3
IXFK120N30P3
IXYS
MOSFET N-CH 300V 120A TO264AA
IXTH6N80A
IXTH6N80A
IXYS
MOSFET N-CH 800V 6A TO247
MIAA20WE600TMH
MIAA20WE600TMH
IXYS
IGBT MOD 600V 29A 100W MINIPACK2
IXYN110N120A4
IXYN110N120A4
IXYS
IGBT 1200V 110A GNX4 XPT SOT227B
IXSK35N120AU1
IXSK35N120AU1
IXYS
IGBT 1200V 70A 300W TO264
IXGX50N60C2D1
IXGX50N60C2D1
IXYS
IGBT 600V 75A 480W TO247
IXDI514SIA
IXDI514SIA
IXYS
IC GATE DRVR LOW-SIDE 8SOIC