LGB8204ATH

LGB8204ATH

Images are for reference only
See Product Specifications

LGB8204ATH
Mfr.:
Описание:
D2PAK, IGBT3
Упаковка:
Tape & Reel (TR)
Datasheet:
LGB8204ATH Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:LGB8204ATH
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):394daf820600c302455fe3ade1376ef9
Current - Collector (Ic) (Max):bf05093b7e2caea35e7adc4dd87b6402
Current - Collector Pulsed (Icm):80048aebe005b9413929a11bba83f563
Vce(on) (Max) @ Vge, Ic:e063feed84f52618d9ec772ac8bd199c
Power - Max:92e7f90834277d0da34b7838c52a153e
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:35ba1271dff4019593d3034c929e1bbc
Gate Charge:336d5ebc5436534e61d16e63ddfca327
Td (on/off) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Test Condition:336d5ebc5436534e61d16e63ddfca327
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:28dc10fa1251e54eadc93e4958741fed
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IGU04N60TAKMA1
IGU04N60TAKMA1
Infineon Technologies
IGBT TRENCH 600V 8A TO251-3
MGW12N120D
MGW12N120D
onsemi
TRANS IGBT CHIP N-CH 1.2KV 20A
RJP3047DPK-80#T2
RJP3047DPK-80#T2
Renesas Electronics America Inc
HIGH SPEED IGBT
STGP7NC60HD
STGP7NC60HD
STMicroelectronics
IGBT 600V 25A 80W TO220
FGY75T95SQDT
FGY75T95SQDT
onsemi
IGBT 950V 75A
IXYP24N100A4
IXYP24N100A4
IXYS
IGBT DISCRETE TO-220
STGWA60H65DFB
STGWA60H65DFB
STMicroelectronics
IGBT BIPO 650V 60A TO247-3
IRG4IBC30FD
IRG4IBC30FD
Infineon Technologies
IGBT 600V 20.3A 45W TO220FP
92-0235
92-0235
Infineon Technologies
IGBT 430V 20A 125W TO220AB
IXGK60N60
IXGK60N60
IXYS
IGBT 600V 75A 300W TO264
IKA10N65ET6XKSA1
IKA10N65ET6XKSA1
Infineon Technologies
IGBT 650V 10A TO220-3
RGW40TK65GVC11
RGW40TK65GVC11
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
Вас также может заинтересовать
IXBOD1-09
IXBOD1-09
IXYS
IC SGL DIODE BOD 0.9A 900V FP
GBO25-12NO1
GBO25-12NO1
IXYS
BRIDGE RECT 1P 1.2KV 25A 4SIP
MDA950-20N1W
MDA950-20N1W
IXYS
DIODE MODULE 2KV 950A
MCC501-14IO1
MCC501-14IO1
IXYS
SCR THY PHASE LEG 1400V WC-501
IXFN220N20X3
IXFN220N20X3
IXYS
MOSFET N-CH 200V 160A SOT227B
IXTA26P10T
IXTA26P10T
IXYS
MOSFET P-CH 100V 26A TO263
IXFP7N100P
IXFP7N100P
IXYS
MOSFET N-CH 1000V 7A TO220AB
IXFQ94N30P3
IXFQ94N30P3
IXYS
MOSFET N-CH 300V 94A TO3P
IXTT10N100D2
IXTT10N100D2
IXYS
MOSFET N-CH 1000V 10A TO268
IXTT1N250HV-TRL
IXTT1N250HV-TRL
IXYS
MOSFET N-CH 2500V 1.5A TO268HV
IXTD4N80P-3J
IXTD4N80P-3J
IXYS
MOSFET N-CH 800V 3.6A DIE
IXGN80N60A2
IXGN80N60A2
IXYS
IGBT MOD 600V 160A 625W SOT227B