MIAA15WB600TMH

MIAA15WB600TMH

Images are for reference only
See Product Specifications

MIAA15WB600TMH
Mfr.:
Описание:
IGBT MOD 600V 23A 80W MINIPACK2
Упаковка:
Box
Datasheet:
MIAA15WB600TMH Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MIAA15WB600TMH
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Modules
Производитель:IXYS
Упаковка:Box
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Configuration:698bc6834ea4766d860faa2115c040fd
Voltage - Collector Emitter Breakdown (Max):9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):037b1bb41724f026a436c64d73ca5330
Power - Max:d28abbf52015a7f73986c7b43f042ffa
Vce(on) (Max) @ Vge, Ic:a3ffaaace7210005147b62d5ea8e3c95
Current - Collector Cutoff (Max):55c7686ddbf6d14635ae95e0d3aee8a3
Input Capacitance (Cies) @ Vce:4d0decbd336e7edcc845e4c9224e2e3a
Input:c226d47df20579bbdabe3bb64e2feb21
NTC Thermistor:93cba07454f06a4a960172bbd6e2a435
Operating Temperature:3d6857d6fc0002a089cb143445c69b56
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:4224d0e18299a4b6937395e90c2fcbe8
Supplier Device Package:4224d0e18299a4b6937395e90c2fcbe8
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
FS450R12OE4BOSA1
FS450R12OE4BOSA1
Infineon Technologies
IGBT MOD 1200V 660A 2250W
FS150R07N3E4BOSA1
FS150R07N3E4BOSA1
Infineon Technologies
FS150R07 - IGBT MODULE
FS150R12KE3BOSA1
FS150R12KE3BOSA1
Infineon Technologies
IGBT MOD 1200V 200A 700W
FP25R12W2T4PBPSA1
FP25R12W2T4PBPSA1
Infineon Technologies
IGBT MOD 1200V 50A 20MW
MIXA40W1200TED
MIXA40W1200TED
IXYS
IGBT MODULE 1200V 60A 195W E2
APTGT100A120T3AG
APTGT100A120T3AG
Microchip Technology
IGBT MODULE 1200V 140A 595W SP3
FF150R12KE3GHOSA1
FF150R12KE3GHOSA1
Infineon Technologies
IGBT MOD 1200V 225A 780W
APTGT300DH60G
APTGT300DH60G
Microchip Technology
IGBT MODULE 600V 430A 1150W SP6
VS-GB400TH120N
VS-GB400TH120N
Vishay General Semiconductor - Diodes Division
IGBT MOD 1200V 800A INT-A-PAK
VS-GB75SA120UP
VS-GB75SA120UP
Vishay General Semiconductor - Diodes Division
IGBT MODULE 1200V 658W SOT227
FS600R07A2E3B31BOSA1
FS600R07A2E3B31BOSA1
Infineon Technologies
IGBT MODULES
VS-GT300TD60S
VS-GT300TD60S
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 580A INT-A-PAK
Вас также может заинтересовать
VUO190-08NO7
VUO190-08NO7
IXYS
BRIDGE RECT 3P 800V 248A PWS-E1
VUO52-20NO1
VUO52-20NO1
IXYS
BRIDGE RECT 3PHASE 2KV 54A V1-A
VUO82-08NO7
VUO82-08NO7
IXYS
BRIDGE RECT 3P 800V 88A PWS-D
MCC95-12IO1B
MCC95-12IO1B
IXYS
THYRISTOR MODULE 1200V 2X116A
CS19-12HO1S-TRL
CS19-12HO1S-TRL
IXYS
SCR 1.2KV 29A TO263
IXTT440N055T2
IXTT440N055T2
IXYS
MOSFET N-CH 55V 440A TO268
IXFK180N15P
IXFK180N15P
IXYS
MOSFET N-CH 150V 180A TO264AA
IXFL132N50P3
IXFL132N50P3
IXYS
MOSFET N-CH 500V 63A ISOPLUS264
IXFK60N25Q
IXFK60N25Q
IXYS
MOSFET N-CH 250V 60A TO264AA
IXFR80N20Q
IXFR80N20Q
IXYS
MOSFET N-CH 200V 71A ISOPLUS247
IXYB82N120C3H1
IXYB82N120C3H1
IXYS
IGBT 1200V 164A 1040W PLUS264
IXGK75N250
IXGK75N250
IXYS
IGBT 2500V 170A 780W TO264