MIEB101W1200EH

MIEB101W1200EH

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MIEB101W1200EH
Mfr.:
Описание:
IGBT MODULE 1200V 183A 630W E3
Упаковка:
Box
Datasheet:
MIEB101W1200EH Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MIEB101W1200EH
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Modules
Производитель:IXYS
Упаковка:Box
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Configuration:bb19530c2e647efa9597891a2071629a
Voltage - Collector Emitter Breakdown (Max):edca1d2343e4e5615ce51a879f622a76
Current - Collector (Ic) (Max):22746f4edbf23412116bb4c22f38024f
Power - Max:fd9794a1ef44ca1770d619c04426617c
Vce(on) (Max) @ Vge, Ic:ffcd527b26c023cecc0d6547ce558582
Current - Collector Cutoff (Max):9cb03b00a0d3caa19e33763145af2e88
Input Capacitance (Cies) @ Vce:116084de2f80e96ab74a828f3c8014e2
Input:eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:3d6857d6fc0002a089cb143445c69b56
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:b29bcbb0f188e0093434a5f213285f46
Supplier Device Package:b29bcbb0f188e0093434a5f213285f46
In Stock: 0
Stock:
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