MIO1200-33E10

MIO1200-33E10

Images are for reference only
See Product Specifications

MIO1200-33E10
Mfr.:
Описание:
IGBT MODULE 3300V 1200A E10
Упаковка:
Box
Datasheet:
MIO1200-33E10 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:MIO1200-33E10
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Modules
Производитель:IXYS
Упаковка:Box
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Configuration:c54ce21951bf3551036cdce03786d9c6
Voltage - Collector Emitter Breakdown (Max):f4d713fd93329c8cb505da1085782e4e
Current - Collector (Ic) (Max):e07fc1a98469dc8d5763b0f3560b67ce
Power - Max:336d5ebc5436534e61d16e63ddfca327
Vce(on) (Max) @ Vge, Ic:38c8e7b62d078436f2aed440525a66b3
Current - Collector Cutoff (Max):2ea462801769e2ea7ed82b45ab1b2ca1
Input Capacitance (Cies) @ Vce:cb7d88ae30c413b2f42389ff0c49a21d
Input:eb6d8ae6f20283755b339c0dc273988b
NTC Thermistor:bafd7322c6e97d25b6299b5d6fe8920b
Operating Temperature:3d6857d6fc0002a089cb143445c69b56
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:fa9454bd584613c584f7328c2023fae3
Supplier Device Package:fa9454bd584613c584f7328c2023fae3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
APTGT200DH60G
APTGT200DH60G
Microchip Technology
IGBT MODULE 600V 290A 625W SP6
APTGT300A60G
APTGT300A60G
Microchip Technology
IGBT MODULE 600V 430A 1150W SP6
APTGT300DA170G
APTGT300DA170G
Microchip Technology
IGBT MODULE 1700V 400A 1660W SP6
FF450R17ME3BOSA1
FF450R17ME3BOSA1
Infineon Technologies
IGBT MOD 1700V 605A 2250W
FS800R07A2E3B32BOSA1
FS800R07A2E3B32BOSA1
Infineon Technologies
IGBT MODULES
HGT1N40N60A4D
HGT1N40N60A4D
onsemi
IGBT MOD 600V 110A 298W SOT227B
APTGF100DA120TG
APTGF100DA120TG
Microchip Technology
IGBT MODULE 1200V 135A 568W SP4
APTGT225DA170G
APTGT225DA170G
Microsemi Corporation
IGBT MODULE 1700V 340A 1250W SP6
CM150DU-24H
CM150DU-24H
Powerex Inc.
IGBT MOD 1200V 150A 890W
IXA90IF650NA
IXA90IF650NA
IXYS
IGBT MODULE 650V 90A SOT227B
VS-GT50TP60N
VS-GT50TP60N
Vishay General Semiconductor - Diodes Division
IGBT MOD 600V 85A 208W INT-A-PAK
A1C15S12M3-F
A1C15S12M3-F
STMicroelectronics
IGBT MOD 1200V 15A ACEPACK1
Вас также может заинтересовать
DSAI35-16A
DSAI35-16A
IXYS
DIODE AVALANCHE 1.6KV 49A DO203
VWO36-08IO7
VWO36-08IO7
IXYS
MODULE AC CTLR 3PH 800V ECO-PAC1
IXFX360N15T2
IXFX360N15T2
IXYS
MOSFET N-CH 150V 360A PLUS247-3
IXFX80N50Q3
IXFX80N50Q3
IXYS
MOSFET N-CH 500V 80A PLUS247-3
IXTH36P10
IXTH36P10
IXYS
MOSFET P-CH 100V 36A TO247
IXFL44N100P
IXFL44N100P
IXYS
MOSFET N-CH 1000V 22A ISOPLUS264
IXYH50N65C3D1
IXYH50N65C3D1
IXYS
IGBT
IXGP12N120A2
IXGP12N120A2
IXYS
IGBT 1200V 24A 75W TO220
IXGR35N120D1
IXGR35N120D1
IXYS
IGBT 1200V ISOPLUS247
IXGH28N60A3
IXGH28N60A3
IXYS
IGBT
IXCY40M35
IXCY40M35
IXYS
IC CURRENT REGULATOR DPAK
IXDN509SIAT/R
IXDN509SIAT/R
IXYS
IC GATE DRVR LOW-SIDE 8SOIC