UGE0221AY4

UGE0221AY4

Images are for reference only
See Product Specifications

UGE0221AY4
Mfr.:
Описание:
DIODE GEN PURP 4.8KV 10.2A UGE
Упаковка:
Bulk
Datasheet:
UGE0221AY4 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:UGE0221AY4
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:IXYS
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):6f57d8488c13d720ad4ce975f285c7d2
Current - Average Rectified (Io):8f0afba3f1a7cd8af47f7265148f61d6
Voltage - Forward (Vf) (Max) @ If:151c9c021c2f7263d0fb58608348bdf7
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Current - Reverse Leakage @ Vr:dff86ac26390e51d9e18a3030d9081a1
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:da0d6078de3703b5680eb9361f2d68fd
Supplier Device Package:da0d6078de3703b5680eb9361f2d68fd
Operating Temperature - Junction:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
RS2GHE3_A/H
RS2GHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
HSB88WKTL-E
HSB88WKTL-E
Renesas Electronics America Inc
RECTIFIER DIODE, 0.015A, 10V
ES1D-TP
ES1D-TP
Micro Commercial Co
DIODE GEN PURP 200V 1A DO214AC
MBR8045
MBR8045
GeneSiC Semiconductor
DIODE SCHOTTKY 45V 80A DO5
VS-1N1200RA
VS-1N1200RA
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 12A DO203AA
STTH30RQ06WY
STTH30RQ06WY
STMicroelectronics
DIODE GEN PURP 600V 30A DO247
SSA33LHE3/5AT
SSA33LHE3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 3A DO214AC
RDS80610XX
RDS80610XX
Powerex Inc.
DIODE GEN PURP 600V 10000A
BAS70-02V-V-G-08
BAS70-02V-V-G-08
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 70V 100MA SOD523
RGP02-15EHE3/53
RGP02-15EHE3/53
Vishay General Semiconductor - Diodes Division
DIODE GP 1.5KV 500MA DO204AL
HS5B M6G
HS5B M6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 5A DO214AB
SR1503
SR1503
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 15A 30V R-6
Вас также может заинтересовать
VBO68-08NO7
VBO68-08NO7
IXYS
BRIDGE RECT 1P 800V 68A ECO-PAC1
DSEI2X30-06P
DSEI2X30-06P
IXYS
DIODE MODULE 600V 30A ECO-PAC1
MDO1201-22N1
MDO1201-22N1
IXYS
DIODE GEN PURP 2.2KV 1950A
VKF55-08IO7
VKF55-08IO7
IXYS
RECT BRIDGE 1PH 800V FO-T-A
IXTT96N15P
IXTT96N15P
IXYS
MOSFET N-CH 150V 96A TO268
IXFH52N30P
IXFH52N30P
IXYS
MOSFET N-CH 300V 52A TO247AD
IXTT12N150
IXTT12N150
IXYS
MOSFET N-CH 1500V 12A TO268
IXTB62N50L
IXTB62N50L
IXYS
MOSFET N-CH 500V 62A PLUS264
MWI30-06A7
MWI30-06A7
IXYS
IGBT MODULE 600V 45A 140W E2
IXBH5N160G
IXBH5N160G
IXYS
IGBT 1600V 5.7A 68W TO247AD
IXGH12N120A2D1
IXGH12N120A2D1
IXYS
IGBT 1200V 12A TO-247
IXGP30N60C3
IXGP30N60C3
IXYS
IGBT 600V 60A 220W TO220AB