VUO110-16NO7

VUO110-16NO7

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VUO110-16NO7
Mfr.:
Описание:
BRIDGE RECT 3P 1.6KV 127A PWS-E1
Упаковка:
Bulk
Datasheet:
VUO110-16NO7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VUO110-16NO7
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:IXYS
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:061d2b036a0dc75e345e3534e835e943
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):781195c0e17f0796e785d1b20d1e8805
Current - Average Rectified (Io):a85cfae53aec15078b44a20fc8e75af7
Voltage - Forward (Vf) (Max) @ If:b427f1e9fc994138ce801b92c6f8d16b
Current - Reverse Leakage @ Vr:a672960d3b66b85260664a0b86010d90
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:ddcc44b1a916125841a2df47b1111ed2
Supplier Device Package:ddcc44b1a916125841a2df47b1111ed2
In Stock: 0
Stock:
0 Can Ship Immediately
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Для использования с
CS10S
CS10S
Diotec Semiconductor
1PH BRIDGE DIL 20V 1A
BR1006
BR1006
EIC SEMICONDUCTOR INC.
STD 10A, CASE TYPE: BR10
M5060TB600
M5060TB600
Sensata-Crydom
BRIDGE RECT 3P 600V 60A MODULE
GBLA06-M3/51
GBLA06-M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 4A GBL
GBL01-M3/45
GBL01-M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 100V 4A GBL
GBU8K-M3/45
GBU8K-M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 8A GBU
GBJ2006-B1-0000
GBJ2006-B1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 600V 20A 6KBJ
MP5010W
MP5010W
Micro Commercial Co
BRIDGE RECT 1P 1KV 50A MP-50WW
2KBP08M
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onsemi
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VBO65-18NO7
VBO65-18NO7
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BRIDGE RECT 1P 1.8KV 65A FO-T-A
W02M
W02M
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BRIDGE RECT 1PHASE 200V 1.5A WOM
GBU8KL-5302M3/45
GBU8KL-5302M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 800V 3.9A GBU
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