VUO160-16NO7

VUO160-16NO7

Images are for reference only
See Product Specifications

VUO160-16NO7
Mfr.:
Описание:
BRIDGE RECT 3P 1.6KV 175A PWS-E1
Упаковка:
Bulk
Datasheet:
VUO160-16NO7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VUO160-16NO7
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Bridge Rectifiers
Производитель:IXYS
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:061d2b036a0dc75e345e3534e835e943
Technology:eb6d8ae6f20283755b339c0dc273988b
Voltage - Peak Reverse (Max):781195c0e17f0796e785d1b20d1e8805
Current - Average Rectified (Io):eed7ca445a69c00771b3eed136aa4805
Voltage - Forward (Vf) (Max) @ If:f299e143228e48490fec38ac25f4ff85
Current - Reverse Leakage @ Vr:715eb6f356620ba641c08fd2096db416
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:ddcc44b1a916125841a2df47b1111ed2
Supplier Device Package:ddcc44b1a916125841a2df47b1111ed2
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
KBPC5001FP
KBPC5001FP
Diotec Semiconductor
1PH BRIDGE KBPC 100V 50A
BU2010-M3/45
BU2010-M3/45
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1P 1KV 20A BU
DF08-G
DF08-G
Comchip Technology
BRIDGE RECT 1PHASE 800V 1A 4-DF
BR102
BR102
GeneSiC Semiconductor
BRIDGE RECT 1P 200V 10A BR-10
MB356W-BP
MB356W-BP
Micro Commercial Co
BRIDGE RECT 1P 600V 35A MB-35W
GBJ2010-G
GBJ2010-G
Comchip Technology
BRIDGE RECT 1PHASE 1KV 20A GBJ
3KBP04M-E4/72
3KBP04M-E4/72
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 400V 3A KBPM
TS15PL05GH
TS15PL05GH
Taiwan Semiconductor Corporation
BRIDGE RECT 1P 600V 15A TS-6P
G3SBA60L-5703M3/51
G3SBA60L-5703M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 2.3A GBU
G3SBA60L-6088M3/51
G3SBA60L-6088M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 2.3A GBU
GBU6JL-5704M3/51
GBU6JL-5704M3/51
Vishay General Semiconductor - Diodes Division
BRIDGE RECT 1PHASE 600V 3.8A GBU
BU2010L-7001E3/51
BU2010L-7001E3/51
Vishay General Semiconductor - Diodes Division
DIODE BRIDGE 20A 1000V
Вас также может заинтересовать
MDNA210UB2200PTED
MDNA210UB2200PTED
IXYS
BIPOLARMODULE-RECTIFIER+BRAKE E2
VUO34-14NO1
VUO34-14NO1
IXYS
BRIDGE RECT 3P 1.4KV 36A V1-A
MEK350-02DA
MEK350-02DA
IXYS
DIODE MODULE 200V 356A Y4-M6
DPF400C400NB
DPF400C400NB
IXYS
DIODE GEN PURP 400V 400A SOT227B
VW2X60-16IO1
VW2X60-16IO1
IXYS
MODULE AC CTLR 2X60A 1600V V1-A
MCC700-20IO1W
MCC700-20IO1W
IXYS
SCR THY PHASE LEG 2000V WC-500
IXFN170N25X3
IXFN170N25X3
IXYS
MOSFET N-CH 250V 170A SOT227B
IXFA180N10T2-TRL
IXFA180N10T2-TRL
IXYS
MOSFET N-CH 100V 180A TO263
MIXA150W1200TEH
MIXA150W1200TEH
IXYS
IGBT MODULE 1200V 220A 695W E3
IXEH40N120D1
IXEH40N120D1
IXYS
IGBT 1200V 60A 300W TO247AD
IXGP2N100A
IXGP2N100A
IXYS
IGBT 1000V 4A 25W TO220AB
IXCP02M45
IXCP02M45
IXYS
IC CURRENT REGULATOR TO220AB