VWM200-01P

VWM200-01P

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See Product Specifications

VWM200-01P
Mfr.:
Описание:
MOSFET 6N-CH 100V 210A V2
Упаковка:
Bulk
Datasheet:
VWM200-01P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VWM200-01P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:IXYS
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:0a70bdd59e4a49d3360bb9e70b4da94f
FET Feature:eb6d8ae6f20283755b339c0dc273988b
Drain to Source Voltage (Vdss):d22a194635d575835f3a071bc1de1f74
Current - Continuous Drain (Id) @ 25°C:719e53d0fe69c6bd2b7fd4109f76dddf
Rds On (Max) @ Id, Vgs:cee47ef9d1247a73291361dc7b28acc4
Vgs(th) (Max) @ Id:bf97e2eca92af8b59d1ac592805d8658
Gate Charge (Qg) (Max) @ Vgs:60df813a6ddfa0bf31fde73f5080ee92
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
Power - Max:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:bcdcb81c41247470cb43750e1f346375
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:cbe9e6da81807cc96374811f74cc3171
Supplier Device Package:cbe9e6da81807cc96374811f74cc3171
In Stock: 0
Stock:
0 Can Ship Immediately
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