W3477MC400

W3477MC400

Images are for reference only
See Product Specifications

W3477MC400
Mfr.:
Описание:
RECTIFIER DIODE
Упаковка:
Bulk
Datasheet:
W3477MC400 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W3477MC400
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:IXYS
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):1681124fd36facc795765d329871d953
Current - Average Rectified (Io):d163d367cc1c3030f783e19c3cd890a0
Voltage - Forward (Vf) (Max) @ If:16084d76958ee62038a6787575f2babb
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):cd78defc8e58eff9149d2bd58d6c9cca
Current - Reverse Leakage @ Vr:df3449d54735971b6b782aeac484024e
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:590d909d6f47e01b023c654b7cd616a3
Supplier Device Package:7578e501793c4a30edc021252dd88c3f
Operating Temperature - Junction:2d8f52a15625f231121d0127f87d1cab
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
SBA140CH_R1_00001
SBA140CH_R1_00001
Panjit International Inc.
EXTREME LOW VF SCHOTTKY RECTIFIE
NTE5827
NTE5827
NTE Electronics, Inc
R-400 PRV 50 A ANODE CASE
E1JF-F1-0000HF
E1JF-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A SMAF
EGF1C
EGF1C
Fairchild Semiconductor
RECTIFIER DIODE, 1A, 150V, DO-21
NRVBA210LT3G
NRVBA210LT3G
onsemi
SCHOTTKY POWER RECTIFIER, SURFAC
BYG10GHE3_A/H
BYG10GHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE AVALANCHE 400V 1.5A DO214
SF2006PTH
SF2006PTH
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 20A TO247AD
VS-40HFR160M
VS-40HFR160M
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 40A DO203AB
R7201609XXOO
R7201609XXOO
Powerex Inc.
DIODE GP 1.6KV 900A DO200AB
JANS1N5712UBCA
JANS1N5712UBCA
Microchip Technology
SCHOTTKY DIODE
GP10-4006-E3/73
GP10-4006-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 1A DO204AL
SS39 M6G
SS39 M6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 90V 3A DO214AB
Вас также может заинтересовать
VBO55-12NO7
VBO55-12NO7
IXYS
BRIDGE RECT 1P 1.2KV 55A FO-T-A
DGSK40-018A
DGSK40-018A
IXYS
DIODE ARRAY SCHOTTKY 180V TO220
DSEI2X61-10P
DSEI2X61-10P
IXYS
DIODE MODULE 1KV 60A ECO-PAC1
DSI30-12AS-TRL
DSI30-12AS-TRL
IXYS
DIODE GEN PURP 1.2KV 30A TO263
MCMA240UI1600ED
MCMA240UI1600ED
IXYS
SCR MODULE 1.6KV 240A E2 PACK
VMM300-03F
VMM300-03F
IXYS
MOSFET 2N-CH 300V 290A Y3-DCB
IXTH140P10T
IXTH140P10T
IXYS
MOSFET P-CH 100V 140A TO247
IXTN46N50L
IXTN46N50L
IXYS
MOSFET N-CH 500V 46A SOT-227B
IXTP15P15T
IXTP15P15T
IXYS
MOSFET P-CH 150V 15A TO220AB
FDM21-05QC
FDM21-05QC
IXYS
MOSFET N-CH 500V 21A I4PAC
IXYP50N65C3
IXYP50N65C3
IXYS
IGBT 650V 130A 600W TO220
IXXH75N60B3D1
IXXH75N60B3D1
IXYS
IGBT 600V 160A 750W TO247