W6672TJ350

W6672TJ350

Images are for reference only
See Product Specifications

W6672TJ350
Mfr.:
Описание:
DIODE GEN PURP 1.9KV 6672A -
Упаковка:
Box
Datasheet:
W6672TJ350 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W6672TJ350
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:IXYS
Упаковка:Box
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):59aece224abe007fb38a882072ffcb6b
Current - Average Rectified (Io):bfabf2c1b1a9384730bbe618f4780015
Voltage - Forward (Vf) (Max) @ If:40af22e438bdb2df72dee506763db3bd
Speed:506dc4c3c6b37b60cdf6e54561f7a530
Reverse Recovery Time (trr):0b618050c601a2226c949b797be283e7
Current - Reverse Leakage @ Vr:b9a7d1401e72d64e7fee0ff2fef53d54
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:068d35ebca603e0b29899aa03c509d19
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Operating Temperature - Junction:2d8f52a15625f231121d0127f87d1cab
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
S2KFS M3G
S2KFS M3G
Taiwan Semiconductor Corporation
2A, 800V, STANDARD RECOVERY RECT
MUH1PCHM3/89A
MUH1PCHM3/89A
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A MICROSMP
BYWB29-200HE3_A/P
BYWB29-200HE3_A/P
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 8A TO263AB
VS-10ETF04S-M3
VS-10ETF04S-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 10A D2PAK
TSF20H150C-S
TSF20H150C-S
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 10A ITO220AB
VS-20ETS12FP-M3
VS-20ETS12FP-M3
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.2KV 20A TO220FP
10ETS08STRR
10ETS08STRR
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 800V 10A D2PAK
RGL41B/1
RGL41B/1
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO213AB
EGP30D-E3/54
EGP30D-E3/54
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A GP20
GP10Y-E3/53
GP10Y-E3/53
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 1.6KV 1A DO204AL
FRA805G-BP
FRA805G-BP
Micro Commercial Co
DIODE FAST REC TO-220AC
SRT12H
SRT12H
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 1A TS-1
Вас также может заинтересовать
VUO82-16NO7
VUO82-16NO7
IXYS
BRIDGE RECT 3P 1.6KV 88A PWS-D
VBO130-16NO7
VBO130-16NO7
IXYS
BRIDGE RECT 1P 1.6KV 122A PWS-E
DPG30C400HB
DPG30C400HB
IXYS
DIODE ARRAY GP 400V 15A TO247AD
DLA5P800UC-TUB
DLA5P800UC-TUB
IXYS
POWER DIODE DISCRETES-RECTIFIER
DHG100X600NA
DHG100X600NA
IXYS
DIODE MODULE 600V 100A SOT227B
VHF28-14IO5
VHF28-14IO5
IXYS
RECT BRIDGE 1PH 1400V FO-F-A
N8440FA280
N8440FA280
IXYS
SCR 2.8KV W119
IXTH15N50L2
IXTH15N50L2
IXYS
MOSFET N-CH 500V 15A TO247
IXFN32N100Q3
IXFN32N100Q3
IXYS
MOSFET N-CH 1000V 28A SOT227B
IXTK62N25
IXTK62N25
IXYS
MOSFET N-CH 250V 62A TO264
MII100-12A3
MII100-12A3
IXYS
IGBT MODULE 1200V 135A 560W Y4M5
IXGR40N60CD1
IXGR40N60CD1
IXYS
IGBT 600V 75A 200W ISOPLUS247