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KL-4P100D-E1

KL-4P100D-E1

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See Product Specifications

KL-4P100D-E1
Mfr.:
Описание:
4 POINT PROBING METAL ONLY PATTE
Упаковка:
Bag
Datasheet:
KL-4P100D-E1 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:KL-4P100D-E1
Категория:Tapes, Adhesives, Materials
Подкатегория:2D Materials
Производитель:Kennedy Labs, a division of Hub Incorporated
Упаковка:Bag
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Type:336d5ebc5436534e61d16e63ddfca327
Number of Layers:336d5ebc5436534e61d16e63ddfca327
Length:336d5ebc5436534e61d16e63ddfca327
Width:336d5ebc5436534e61d16e63ddfca327
Thickness - Theoretical:336d5ebc5436534e61d16e63ddfca327
Size:336d5ebc5436534e61d16e63ddfca327
Substrate:336d5ebc5436534e61d16e63ddfca327
Suspension:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
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Для использования с
KLG-CUFOAM-1010-CU
KLG-CUFOAM-1010-CU
Kennedy Labs, a division of Hub Incorporated
GRAPHENE ON COPPER FOAM 10MM2
KLG-100100-18CU+PMMA
KLG-100100-18CU+PMMA
Kennedy Labs, a division of Hub Incorporated
CVD GRAPHENE ON CU 4" PMMA X1
KL-HBN2-1010-18CU
KL-HBN2-1010-18CU
Kennedy Labs, a division of Hub Incorporated
LARGE CRYSTAL MONOLAYER HE 4
KL-6P100-E1
KL-6P100-E1
Kennedy Labs, a division of Hub Incorporated
6 POINT METAL ONLY, 16 DIE COUPO
KL-HF100-E1
KL-HF100-E1
Kennedy Labs, a division of Hub Incorporated
HALL EFFECT STRUCTURE ON SIO2 ON
KL-LS101-E1
KL-LS101-E1
Kennedy Labs, a division of Hub Incorporated
LARGE SERPENTINE WITH BN
KL-A100HF101-E1
KL-A100HF101-E1
Kennedy Labs, a division of Hub Incorporated
A100 WITH HEADER AND HALL WITH B
KL-DC802-E1
KL-DC802-E1
Kennedy Labs, a division of Hub Incorporated
80 PIN DROP CASTING DIE, METAL P
KL-A300IDEG300-E1
KL-A300IDEG300-E1
Kennedy Labs, a division of Hub Incorporated
AS300 WITH IDE GROUP 2 WIRE BOND
SNS-C16.7-0808-150-D45-P
SNS-C16.7-0808-150-D45-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
S2D-18D3-0808-150-P
S2D-18D3-0808-150-P
Finisar Corporation
2D SILICON NANOSTAMP: HEXAGONAL
SNS-C16.7-0808-150-D55-P
SNS-C16.7-0808-150-D55-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
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