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KL-GAOX-1010-ALO

KL-GAOX-1010-ALO

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See Product Specifications

KL-GAOX-1010-ALO
Mfr.:
Описание:
GALLIUM OXIDE SAPHIRE SUB 10MM2
Упаковка:
Tray
Datasheet:
KL-GAOX-1010-ALO Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:KL-GAOX-1010-ALO
Категория:Tapes, Adhesives, Materials
Подкатегория:2D Materials
Производитель:Kennedy Labs, a division of Hub Incorporated
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Type:336d5ebc5436534e61d16e63ddfca327
Number of Layers:336d5ebc5436534e61d16e63ddfca327
Length:336d5ebc5436534e61d16e63ddfca327
Width:336d5ebc5436534e61d16e63ddfca327
Thickness - Theoretical:336d5ebc5436534e61d16e63ddfca327
Size:336d5ebc5436534e61d16e63ddfca327
Substrate:336d5ebc5436534e61d16e63ddfca327
Suspension:336d5ebc5436534e61d16e63ddfca327
In Stock: 2
Stock:
2 Can Ship Immediately
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Для использования с
KLG-1010-18Q
KLG-1010-18Q
Kennedy Labs, a division of Hub Incorporated
CVD GRAPHENE ON QUARTZ X 4PCS
S2D-18C2-0808-350-P
S2D-18C2-0808-350-P
Finisar Corporation
2D SILICON NANOSTAMP: HEXAGONAL
SNS-C72-2525-50-P
SNS-C72-2525-50-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
KL-4P100-E1
KL-4P100-E1
Kennedy Labs, a division of Hub Incorporated
4 POINT PROBING METAL ONLY PATTE
KL-IDE100-E1
KL-IDE100-E1
Kennedy Labs, a division of Hub Incorporated
IDE GROUP A, 12 DIE, FOUR WIDTHS
KL-HF101-E1
KL-HF101-E1
Kennedy Labs, a division of Hub Incorporated
HALL EFFECT STRUCTURE ON SIO2 ON
KL-HF101D-E1
KL-HF101D-E1
Kennedy Labs, a division of Hub Incorporated
HALL EFFECT STRUCTURE ON SIO2 ON
KL-4P101D-E1
KL-4P101D-E1
Kennedy Labs, a division of Hub Incorporated
4 POINT DIE, METAL AND BN, 16 DI
KL-A4006P101-E1
KL-A4006P101-E1
Kennedy Labs, a division of Hub Incorporated
OPEN CAVITY PACKAGE WITH 6 POINT
KL-A300IDE201-E1
KL-A300IDE201-E1
Kennedy Labs, a division of Hub Incorporated
AS300 WITH IDE GROUP 2 WIRE BOND
KL-A400HFG200-E1
KL-A400HFG200-E1
Kennedy Labs, a division of Hub Incorporated
OPEN CAVITY 16 PIN SOIC PACKAGE
SNS-C18-2009-140-D29-P
SNS-C18-2009-140-D29-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
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