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KLG-100100-18CU

KLG-100100-18CU

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See Product Specifications

KLG-100100-18CU
Mfr.:
Описание:
MONO CVD GRAPHENE ON CU 4" X1PCS
Упаковка:
Tray
Datasheet:
KLG-100100-18CU Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:KLG-100100-18CU
Категория:Tapes, Adhesives, Materials
Подкатегория:2D Materials
Производитель:Kennedy Labs, a division of Hub Incorporated
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Type:b1eaa049704ee44d03ce3d9b4623b12e
Number of Layers:c4ca4238a0b923820dcc509a6f75849b
Length:336d5ebc5436534e61d16e63ddfca327
Width:ab33bd0629e6a9dcb61746c62e3654a2
Thickness - Theoretical:621b5416c1efc27424cab2cc8657b2ad
Size:336d5ebc5436534e61d16e63ddfca327
Substrate:9ccc6999e19dba88239688605b27cd7a
Suspension:336d5ebc5436534e61d16e63ddfca327
In Stock: 7
Stock:
7 Can Ship Immediately
  • Делиться:
Для использования с
KL-HBN2-1010-18CU
KL-HBN2-1010-18CU
Kennedy Labs, a division of Hub Incorporated
LARGE CRYSTAL MONOLAYER HE 4
S2D-24B2-0808-350-P
S2D-24B2-0808-350-P
Finisar Corporation
2D SILICON NANOSTAMP: RECTANGULA
SNS-C72-1212-50-P
SNS-C72-1212-50-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
KLG-1010-18CU+PMMA
KLG-1010-18CU+PMMA
Kennedy Labs, a division of Hub Incorporated
CVD GRAPHENE X4 ON CU PMMA
KL-IDE100D-E1
KL-IDE100D-E1
Kennedy Labs, a division of Hub Incorporated
IDE GROUP A, 12 DIE DICED, FOUR
KL-LS101-E1
KL-LS101-E1
Kennedy Labs, a division of Hub Incorporated
LARGE SERPENTINE WITH BN
KL-IDE200D-E1
KL-IDE200D-E1
Kennedy Labs, a division of Hub Incorporated
IDE GROUP B, 12 DIE DICED, FOUR
KL-A1004PG200-E1
KL-A1004PG200-E1
Kennedy Labs, a division of Hub Incorporated
A100 WITH HEADER AND 4 POINT VAN
KL-HBN2-100100-18CU
KL-HBN2-100100-18CU
Kennedy Labs, a division of Hub Incorporated
4"X4" CVD MONOLAYER HBN ON COPPE
SNS-C18-2009-110-D50-P
SNS-C18-2009-110-D50-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
S2D-18D3-0808-150-P
S2D-18D3-0808-150-P
Finisar Corporation
2D SILICON NANOSTAMP: HEXAGONAL
SNS-C14.3-0808-150-D55-P
SNS-C14.3-0808-150-D55-P
Finisar Corporation
LINEAR SILICON NANOSTAMP: PERIOD
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