3N163 DIE

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See Product Specifications

Mfr. #:

3N163 DIE

Mfr.:

Linear Integrated Systems, Inc.

Описание:

P-CHANNEL, SINGLE ENHANCEMENT MO

Упаковка:

Tray

Datasheet:

3N163 DIE Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	3N163 DIE
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Linear Integrated Systems, Inc.
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	9945a529f9f3f7e23d6cd49cab56133a
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	628cbc3e45d5bacb32414a526acf56ef
Current - Continuous Drain (Id) @ 25°C:	2e2b8b2c3556c3b861c5e33e2d78ffa7
Drive Voltage (Max Rds On, Min Rds On):	c828a77388b77eed02df2bdc48ce88f8
Rds On (Max) @ Id, Vgs:	5fd49d5d8199b4e91eae76a61bddcc8a
Vgs(th) (Max) @ Id:	390a5171990dbbe1947a061bc0c07a8c
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	b6465b97479c64769f4f7458ad4f8521
Input Capacitance (Ciss) (Max) @ Vds:	03993e20afbed73b72360c525b47e512
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	952f8d52fbca6da722e72d520acd6edd
Package / Case:	952f8d52fbca6da722e72d520acd6edd