1N5418US

1N5418US

Images are for reference only
See Product Specifications

1N5418US
Описание:
DIODE GEN PURP 400V 3A D5B
Упаковка:
Bulk
Datasheet:
1N5418US Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:1N5418US
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:eb6d8ae6f20283755b339c0dc273988b
Voltage - DC Reverse (Vr) (Max):a51e6c3b115ead349deb13cbf5a43f23
Current - Average Rectified (Io):657dae0913ee12be6fb2a6f687aae1c7
Voltage - Forward (Vf) (Max) @ If:d7154d910e8314773baed0233d09bca3
Speed:cfc142f366adaf55cb22cbcc3f0094b8
Reverse Recovery Time (trr):6683e8853aa8e3d8e5c53126bfd7d30e
Current - Reverse Leakage @ Vr:dc2df496e5bcdcb6e249565f99f4a2fe
Capacitance @ Vr, F:336d5ebc5436534e61d16e63ddfca327
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:7dfd8969667029f00b99d7b8725b997b
Supplier Device Package:15e6202358098a8322d60de45c867870
Operating Temperature - Junction:1a1a7862b3b5abe85ab6bb63480bbb5f
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
VSSA210-M3/5AT
VSSA210-M3/5AT
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 1.7A DO214AC
NTE5839
NTE5839
NTE Electronics, Inc
R-400PRV 3A ANODE CASE
ESH3DHE3_A/H
ESH3DHE3_A/H
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 200V 3A DO214AB
VI30100S-E3/4W
VI30100S-E3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 100V 30A TO262AA
VS-303UA250
VS-303UA250
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 2.5KV 300A DO9
S2G-E3/1
S2G-E3/1
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1.5A DO214AA
SS12HE3_A/I
SS12HE3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20V 1A DO214AC
EGP10G-M3/73
EGP10G-M3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 400V 1A DO204AL
BA604-GS18
BA604-GS18
Vishay General Semiconductor - Diodes Division
DIODE GP 50V 200MA SOD80
SS34L MQG
SS34L MQG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 3A SUB SMA
D251N12BXPSA1
D251N12BXPSA1
Infineon Technologies
DIODE GEN PURP 1.2KV 255A
BAS321/8X
BAS321/8X
Nexperia USA Inc.
DIODE GEN PURP 200V 250MA SOD323
Вас также может заинтересовать
1N8163USE3
1N8163USE3
Microchip Technology
TVS DIODE 28VWM 45.7VC A SQ-MELF
DSC1001BL5-072.0000
DSC1001BL5-072.0000
Microchip Technology
MEMS OSC XO 72.0000MHZ CMOS SMD
UPR5/TR7
UPR5/TR7
Microchip Technology
DIODE GEN PURP 50V 2.5A DO216
SMBJ5350AE3/TR13
SMBJ5350AE3/TR13
Microchip Technology
DIODE ZENER 13V 5W SMBJ
CDLL751
CDLL751
Microchip Technology
DIODE ZENER 5.1V 500MW DO213AB
1N3496
1N3496
Microchip Technology
VOLTAGE REGULATOR
JANHCA1N4621D
JANHCA1N4621D
Microchip Technology
VOLTAGE REGULATOR
ATSAMD51J19A-MF
ATSAMD51J19A-MF
Microchip Technology
IC MCU 32BIT 512KB FLASH 64QFN
PIC32MZ1024ECH064-I/MR
PIC32MZ1024ECH064-I/MR
Microchip Technology
IC MCU 32BIT 1MB FLASH 64VQFN
PIC18F2331T-I/SO
PIC18F2331T-I/SO
Microchip Technology
IC MCU 8BIT 8KB FLASH 28SOIC
AT28HC64B-70JU
AT28HC64B-70JU
Microchip Technology
IC EEPROM 64KBIT PARALLEL 32PLCC
MIC2211-MPBML-TR
MIC2211-MPBML-TR
Microchip Technology
IC REG LINEAR 2.8V/3V 10MLF