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See Product Specifications
| номер части: | 2N3501E3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Microchip Technology |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | e3d31b6d6c1368232482785f7e6d9bd1 |
| Current - Collector (Ic) (Max): | d85f67955f6be9d55b2e0bf043351d00 |
| Voltage - Collector Emitter Breakdown (Max): | f5857b5c2d0b94d156ab7cc94df182c6 |
| Vce Saturation (Max) @ Ib, Ic: | a7706203da3622fce940ff736c17ffd7 |
| Current - Collector Cutoff (Max): | 441b7615d074155ae02efbc6b5db17dd |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | b37edc4b9a922228fdf18284680a225a |
| Power - Max: | 518423de9d41db9800c9bf822055b790 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 724015988cf8db99d1178f4bc356855a |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 93920dff4ce3e5abb3b2aa31e508ea21 |
| Supplier Device Package: | 3f95734e414964c0961dc1548c23f63b |
