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See Product Specifications
| номер части: | 2N3660 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Microchip Technology |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | d889658dfa403cfb746d24838295f36b |
| Current - Collector (Ic) (Max): | 9f6e80dd351494d2db798d784d9b37ed |
| Voltage - Collector Emitter Breakdown (Max): | 6f065265b5ad79aa8b78335bb14c6420 |
| Vce Saturation (Max) @ Ib, Ic: | 336d5ebc5436534e61d16e63ddfca327 |
| Current - Collector Cutoff (Max): | 336d5ebc5436534e61d16e63ddfca327 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 336d5ebc5436534e61d16e63ddfca327 |
| Power - Max: | c4e98427e07794bbc31674c946f82601 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 336d5ebc5436534e61d16e63ddfca327 |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 4e615cbef110d2b405a0bf87696e2ea5 |
| Supplier Device Package: | 270b0c338f1fed8e50c0e0921005b02e |
