2N3879A

2N3879A

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See Product Specifications

2N3879A
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N3879A Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N3879A
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:e3d31b6d6c1368232482785f7e6d9bd1
Current - Collector (Ic) (Max):a47719ecb32d7606a5528e41a07e5236
Voltage - Collector Emitter Breakdown (Max):127321faf7ab6033447f8457edc41d44
Vce Saturation (Max) @ Ib, Ic:ab449f1c733eebf805efdef2c48b57da
Current - Collector Cutoff (Max):001eeffee6d906eccc4698fe46b8a0d2
DC Current Gain (hFE) (Min) @ Ic, Vce:6cd790519140344e7dc10a21582467c3
Power - Max:10ce9b2eff0066628ebea4889e89ed37
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:c2771d890ada902586f7cdb59c500909
Supplier Device Package:02a5219a9cbd4da30149c71bf5423de9
In Stock: 0
Stock:
0 Can Ship Immediately
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