2N5285

2N5285

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See Product Specifications

2N5285
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N5285 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N5285
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d889658dfa403cfb746d24838295f36b
Current - Collector (Ic) (Max):5334a732bb00504c525ac18c7e8c78df
Voltage - Collector Emitter Breakdown (Max):227b5c7c7a2ed2ea3da210ed0860030d
Vce Saturation (Max) @ Ib, Ic:336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:336d5ebc5436534e61d16e63ddfca327
Power - Max:08f18988a962d8d8d5724f3ad430788e
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:4bdb778fe01fdf35a3cdb6e87444f9c2
Package / Case:d2ad0cfeef2b2b15c776fc791d6f43de
Supplier Device Package:6c42b4fcc01f0f733ec787db146eace6
In Stock: 0
Stock:
0 Can Ship Immediately
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