2N5339P

2N5339P

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See Product Specifications

2N5339P
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N5339P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N5339P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:e3d31b6d6c1368232482785f7e6d9bd1
Current - Collector (Ic) (Max):5334a732bb00504c525ac18c7e8c78df
Voltage - Collector Emitter Breakdown (Max):227b5c7c7a2ed2ea3da210ed0860030d
Vce Saturation (Max) @ Ib, Ic:b7142ba4d9c4218ffc3402614d4dd01b
Current - Collector Cutoff (Max):b51414a9f787dc8957b6b45f6f550202
DC Current Gain (hFE) (Min) @ Ic, Vce:81f85b37747588e865d2e5cabb79ec95
Power - Max:d6562c2ec32aee71526d8e2abf944399
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:704935af5eb566cbc4f0ec664168bb86
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:93920dff4ce3e5abb3b2aa31e508ea21
Supplier Device Package:3f95734e414964c0961dc1548c23f63b
In Stock: 0
Stock:
0 Can Ship Immediately
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