2N5609

2N5609

Images are for reference only
See Product Specifications

2N5609
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N5609 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N5609
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d889658dfa403cfb746d24838295f36b
Current - Collector (Ic) (Max):5334a732bb00504c525ac18c7e8c78df
Voltage - Collector Emitter Breakdown (Max):ebd7aaeec2792ddf9fe1af48370ec717
Vce Saturation (Max) @ Ib, Ic:6b9cea3825e053e62c02a3c836c1bf12
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:336d5ebc5436534e61d16e63ddfca327
Power - Max:d68990b126a93023394a05f1f1ce60e4
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:c2771d890ada902586f7cdb59c500909
Supplier Device Package:02a5219a9cbd4da30149c71bf5423de9
In Stock: 0
Stock:
0 Can Ship Immediately
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