2N5969

2N5969

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See Product Specifications

2N5969
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N5969 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N5969
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:d889658dfa403cfb746d24838295f36b
Current - Collector (Ic) (Max):581e296bcea74c29498390ed7d157f7a
Voltage - Collector Emitter Breakdown (Max):227b5c7c7a2ed2ea3da210ed0860030d
Vce Saturation (Max) @ Ib, Ic:336d5ebc5436534e61d16e63ddfca327
Current - Collector Cutoff (Max):336d5ebc5436534e61d16e63ddfca327
DC Current Gain (hFE) (Min) @ Ic, Vce:336d5ebc5436534e61d16e63ddfca327
Power - Max:a0b9f3b90f404caed0151115e04a7e1e
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:724015988cf8db99d1178f4bc356855a
Mounting Type:4bdb778fe01fdf35a3cdb6e87444f9c2
Package / Case:2854e895c752ce6b26314247a4a7b2d9
Supplier Device Package:c332bc3f9c201ad8e5bc6ba78b32778f
In Stock: 0
Stock:
0 Can Ship Immediately
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Для использования с
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