2N6301P

2N6301P

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See Product Specifications

2N6301P
Описание:
POWER BJT
Упаковка:
Bulk
Datasheet:
2N6301P Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N6301P
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - Bipolar (BJT) - Single
Производитель:Microchip Technology
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Transistor Type:961eae0065d58eea563813a4d10cf3ac
Current - Collector (Ic) (Max):f8cc56260823e63e891e80728bae51e6
Voltage - Collector Emitter Breakdown (Max):ebd7aaeec2792ddf9fe1af48370ec717
Vce Saturation (Max) @ Ib, Ic:e9372f4e300c2c58b158a7fdca4ed556
Current - Collector Cutoff (Max):2f58b7b7d5c2069f7c826c103ba91898
DC Current Gain (hFE) (Min) @ Ic, Vce:bbaff04f8764eb94d03536f605518f91
Power - Max:2f303c4782da3716015a2ceffa079d8f
Frequency - Transition:336d5ebc5436534e61d16e63ddfca327
Operating Temperature:83453d3d439da08d47c0a30a4a236a74
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:c2771d890ada902586f7cdb59c500909
Supplier Device Package:02a5219a9cbd4da30149c71bf5423de9
In Stock: 0
Stock:
0 Can Ship Immediately
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