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See Product Specifications
| номер части: | 2N6351E3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - Bipolar (BJT) - Single |
| Производитель: | Microchip Technology |
| Упаковка: | Bulk |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| Transistor Type: | 961eae0065d58eea563813a4d10cf3ac |
| Current - Collector (Ic) (Max): | 5334a732bb00504c525ac18c7e8c78df |
| Voltage - Collector Emitter Breakdown (Max): | f5857b5c2d0b94d156ab7cc94df182c6 |
| Vce Saturation (Max) @ Ib, Ic: | e6288a76bebe49c340383c0c18589fd8 |
| Current - Collector Cutoff (Max): | ead55925e8c07a2f78b816cf419138f6 |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 0917cd30bfb46f29be1a0f9b781e71f1 |
| Power - Max: | d6562c2ec32aee71526d8e2abf944399 |
| Frequency - Transition: | 336d5ebc5436534e61d16e63ddfca327 |
| Operating Temperature: | 44a2efaf4eb6bc5039d348282682bdda |
| Mounting Type: | 506558024381a3c368cb88e9e94f6845 |
| Package / Case: | 39154c6f93d3e8e949b5aaf1b2383576 |
| Supplier Device Package: | 5caed4286b93bac4695d5aad590bff90 |
